High-frequency characterization of on-chip digital interconnects

2002 ◽  
Vol 37 (6) ◽  
pp. 716-725 ◽  
Author(s):  
B. Kleveland ◽  
Xiaoning Qi ◽  
L. Madden ◽  
T. Furusawa ◽  
R.W. Dutton ◽  
...  
Keyword(s):  
High Frequency ◽  
On Chip

Accurate de-embedding technique for on-chip small-signal characterization of high-frequency optical modulator

1996 ◽  
Vol 8 (3) ◽  
pp. 402-404 ◽  
Author(s):  
K.K. Loi ◽  
I. Sakamoto ◽  
X.F. Shao ◽  
H.Q. Hou ◽  
H.H. Liao ◽  
...  
Keyword(s):  
High Frequency ◽  
Optical Modulator ◽  
Small Signal ◽  
Embedding Technique ◽  
On Chip ◽  
Signal Characterization

Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

2011 ◽  
Vol 58 (10) ◽  
pp. 3342-3349 ◽  
Author(s):  
Moonju Cho ◽  
Ben Kaczer ◽  
Marc Aoulaiche ◽  
Robin Degraeve ◽  
Philippe Roussel ◽  
...  
Keyword(s):  
High Frequency ◽  
Ring Oscillator ◽  
Interface Trap ◽  
Charge Pumping ◽  
On Chip

scholarly journals Comparison of Different Large Signal Measurement Setups for High Frequency Inductors

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 691
Author(s):  
Jaime Lopez-Lopez ◽  
Cristina Fernandez ◽  
Andrés Barrado ◽  
Pablo Zumel
Keyword(s):  
Power Supply ◽  
High Frequency ◽  
Frequency Range ◽  
Good Match ◽  
Large Signal ◽  
Systematic Analysis ◽  
High Q ◽  
On Chip ◽  
Quality Factor Q

The growing interest of miniaturized power converters has pushed the development of high frequency inductors integrated in Power Supply on Chip or Power Supply in Package. The proper characterization of inductor impedance is a challenge due to the dependence of the impedance on the current, the high quality factor (Q) and the high frequency range where these devices operate. In this paper, we present a comparison of different measuring methods to characterize high frequency and high Q inductors. The comparison is based on a systematic analysis of the measurement process, quantifying the influence of the parameters that affect the measurement result. Four common measurement setups are analyzed and compared. To validate the calculations, the resistance of a high frequency, high-Q inductor is characterized using every presented setup. The good match between calculations, simulation and measurement validates the analysis and the conclusions extracted.

Characterization of Ni/γ-Al2O3 Catalyst Prepared by Atmospheric High Frequency Cold Plasma Jet for CO2 Reforming of CH4

2010 ◽  
Vol 31 (3) ◽  
pp. 353-359
Author(s):  
Xiaoyan CHAI ◽  
Shuyong SHANG ◽  
Gaihuan LIU ◽  
Xumei TAO ◽  
Xiang LI ◽  
...  
Keyword(s):  
High Frequency ◽  
Cold Plasma ◽  
Plasma Jet
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