Performance comparison and analysis by electrical measurement for through-silicon vias (TSV) in wafer level package

Author(s):  
Yu-Chang Hsieh ◽  
Chung-Hao Chen ◽  
Pao-Nan Lee ◽  
Chen-Chao Wang
2012 ◽  
Vol 5 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Yoshimi Takahashi ◽  
Rajiv Dunne ◽  
Masazumi Amagai ◽  
Yohei Koto ◽  
Shoichi Iriguchi ◽  
...  

2020 ◽  
Vol MA2020-02 (25) ◽  
pp. 1787-1787
Author(s):  
Rebecca Pauline Schmitt ◽  
Lyle Alexander Menk ◽  
Matthew Jordan ◽  
Jason Christopher ◽  
Ehren Donel Baca ◽  
...  

2010 ◽  
Vol 154-155 ◽  
pp. 1695-1698 ◽  
Author(s):  
Kai Lin Pan ◽  
Jing Liu ◽  
Jiao Pin Wang ◽  
Jing Huang

Through silicon vias (TSVs) provide advanced vertical interconnections solutions for system-in-package (SiP) (such as chip to chip, chip to wafer, and wafer to wafer stacking), wafer-level packaging, interposer packaging. At present the shortest electrical path (vertical electrical feed through) between two sides of a silicon chip is one of the important applications. In order to achieve high density and high performance package, TSVs technology has been developed. And for three-dimensional (3D) MEMS (Microelectromechanical System) packaging, TSVs are the most important enabling technology. In this paper, some advantages of TSVs technology are described, and process flow of TSVs module is introduced firstly. Subsequently, a novel electricity test method of Non-Ideal Planes for TSVs is introduced. Finally, many critical issues and challenges of TSVs are reviewed.


Sign in / Sign up

Export Citation Format

Share Document