The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyond

2001 ◽  
Vol 22 (7) ◽  
pp. 327-329 ◽  
Author(s):  
S.F. Ting ◽  
Y.K. Fang ◽  
C.H. Chen ◽  
C.W. Yang ◽  
W.T. Hsieh ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
Dielectric Films ◽  
Remote Plasma ◽  
Plasma Nitridation

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

2001 ◽  
Vol 78 (24) ◽  
pp. 3875-3877 ◽  
Author(s):  
H. N. Al-Shareef ◽  
A. Karamcheti ◽  
T. Y. Luo ◽  
G. Bersuker ◽  
G. A. Brown ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Device Performance ◽  
Remote Plasma ◽  
Plasma Nitridation

He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications

2001 ◽  
Vol 37 (12) ◽  
pp. 788 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Chien-Hao Chen ◽  
Chih-Wei Yang ◽  
Mo-Chiun Yu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Remote Plasma ◽  
Plasma Nitridation ◽  
Technology Applications ◽  
Submicron Cmos ◽  
Thin Gate Oxide

A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
Mitsuaki Hori ◽  
Naoyoshi Tamura ◽  
Masataka Kase ◽  
Hiroko Sakuma ◽  
Hiroyuki Ohota ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Oxide ◽  
Cmos Technology ◽  
X Ray ◽  
Plasma Nitridation ◽  
Secondary Ions ◽  
Physical Thickness

AbstractWe propose a new parameter predicating transconductance (Gm) of the gate dielectric of nitrided SiO2 with the physical thickness below 1.1 nm for high-performance transistors. The 6 different type of nitrided SiO2 are formed using the plasma nitridation or nitric oxide (NO) gas annealing in conditions to adjust a optical thickness ranging 0.96 to 1.19 nm. The material property of nitrided SiO2 are analyzed by secondary ions mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The MOSFET are fabricated using these gate dielectric and 90 nm generation CMOS technology. Then we find a good correlation between the maximum of Gm and the percentage of amount of N(SiN3)3 substructure at the total amount of NSi3 structure measured by XPS, rather than the total dose of nitrogen measured by SIMS.

Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

2002 ◽  
Vol 49 (5) ◽  
pp. 840-846 ◽  
Author(s):  
Chien-Hao Chen ◽  
Yean-Kuen Fang ◽  
Shyh-Fann Ting ◽  
Wen-Tse Hsieh ◽  
Chih-Wei Yang ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Remote Plasma ◽  
Plasma Nitridation

CMOS TECHNOLOGY USING PLASMA NITRIDED OXIDE AS A GATE DIELECTRIC

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-421-C4-424 ◽  
Author(s):  
A. STRABONI ◽  
M. BERENGUER ◽  
B. VUILLERMOZ ◽  
P. DEBENEST ◽  
A. VERNA ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology

Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

2002 ◽  
Vol 23 (12) ◽  
pp. 704-706 ◽  
Author(s):  
H.-H. Tseng ◽  
Y. Jeon ◽  
P. Abramowitz ◽  
T.-Y. Luo ◽  
L. Hebert ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Advanced Technology ◽  
Plasma Nitridation
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