CMOS TECHNOLOGY USING PLASMA NITRIDED OXIDE AS A GATE DIELECTRIC

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-421-C4-424 ◽  
Author(s):  
A. STRABONI ◽  
M. BERENGUER ◽  
B. VUILLERMOZ ◽  
P. DEBENEST ◽  
A. VERNA ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology

Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

2001 ◽  
Vol 670 ◽  
Author(s):  
Igor Polishchuk ◽  
Pushkar Ranade ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
New Technology ◽  
Cmos Technology ◽  
Dielectric Surface ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Low Threshold ◽  
Work Functions ◽  
Electrical Reliability

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

Ultrathin Gate Dielectric Growth at Reduced Pressure

1994 ◽  
Vol 342 ◽  
Author(s):  
Robert McIntosh ◽  
Carl Galewski ◽  
John Grant
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Cmos Technology ◽  
Interface State ◽  
Constant Current ◽  
Reduced Pressure ◽  
Current Stress ◽  
Ultrathin Oxides ◽  
State Generation ◽  
Improved Characteristics

The Growth of ultrathin oxides in N2O ambient has been a subject of extensive research for submicron CMOS technology. Oxides grown in N2O tend to have a higher charge-to-breakdown, less charge trapping under constant current stress, and less interface state generation under current stress and radiation than conventional oxides grown in oxygen [1,2]. In addition the penetration of boron through N2O oxides is significantly less than through conventional thermal oxides [3]. The improved characteristics of N2O are due to an interfacial pileup of nitrogen atoms [1-3]. Thus the growth of thermal oxides in N2O provides a method for obtaining many of the more favorable aspects of reoxidized-nitrided silicon dioxides, with a much simpler process.

scholarly journals Sol–gel deposited ceria thin films as gate dielectric for CMOS technology

2013 ◽  
Vol 36 (2) ◽  
pp. 259-263 ◽  
Author(s):  
ANIL G KHAIRNAR ◽  
ASHOK M MAHAJAN
Keyword(s):  
Thin Films ◽  
Gate Dielectric ◽  
Sol Gel ◽  
Cmos Technology

A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
Mitsuaki Hori ◽  
Naoyoshi Tamura ◽  
Masataka Kase ◽  
Hiroko Sakuma ◽  
Hiroyuki Ohota ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Oxide ◽  
Cmos Technology ◽  
X Ray ◽  
Plasma Nitridation ◽  
Secondary Ions ◽  
Physical Thickness

AbstractWe propose a new parameter predicating transconductance (Gm) of the gate dielectric of nitrided SiO2 with the physical thickness below 1.1 nm for high-performance transistors. The 6 different type of nitrided SiO2 are formed using the plasma nitridation or nitric oxide (NO) gas annealing in conditions to adjust a optical thickness ranging 0.96 to 1.19 nm. The material property of nitrided SiO2 are analyzed by secondary ions mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The MOSFET are fabricated using these gate dielectric and 90 nm generation CMOS technology. Then we find a good correlation between the maximum of Gm and the percentage of amount of N(SiN3)3 substructure at the total amount of NSi3 structure measured by XPS, rather than the total dose of nitrogen measured by SIMS.

Compatibility of HfxTayN metal gate electrode with HfOxNy gate dielectric for advanced CMOS technology

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2516-2521
Author(s):  
Kuei-Shu Chang-Liao ◽  
Hsin-Chun Chang ◽  
B.S. Sahu ◽  
Tzu-Chen Wang ◽  
Tien-Ko Wang
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
Gate Electrode ◽  
Metal Gate

Gate dielectric integrity and reliability in 0.5- mu m CMOS technology

1993 ◽  
Author(s):  
A.W. Strong ◽  
A.K. Stamper ◽  
R.J. Bolam ◽  
T. Furukawa ◽  
C.J. Gow ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology
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