Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

2002 ◽  
Vol 49 (5) ◽  
pp. 840-846 ◽  
Author(s):  
Chien-Hao Chen ◽  
Yean-Kuen Fang ◽  
Shyh-Fann Ting ◽  
Wen-Tse Hsieh ◽  
Chih-Wei Yang ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Remote Plasma ◽  
Plasma Nitridation

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

2001 ◽  
Vol 78 (24) ◽  
pp. 3875-3877 ◽  
Author(s):  
H. N. Al-Shareef ◽  
A. Karamcheti ◽  
T. Y. Luo ◽  
G. Bersuker ◽  
G. A. Brown ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Device Performance ◽  
Remote Plasma ◽  
Plasma Nitridation

Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material

1999 ◽  
Vol 606 ◽  
Author(s):  
Wen-Jie Qi ◽  
Renee Nieh ◽  
Byoung Hun Lee ◽  
Youngjoo Jeon ◽  
Laegu Kang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Dielectric Material ◽  
Oxide Thickness ◽  
Amorphous Structure ◽  
Flat Band ◽  
Equivalent Oxide Thickness ◽  
Low Leakage ◽  
Quantum Mechanical Effects

AbstractReactive-magnetron-sputtered ZrO2 thin film has been deposited on Si directly for gate dielectric application. Both structural and electrical properties of the ZrO2 film have been investigated. An amorphous structure for 30Å ZrO2 and a semi-amorphous structure for 200Å ZrO2 have been revealed. The sputtered film shows a good stoichiometry and a good structural stability of ZrO2 based on the X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy data. Thin equivalent oxide thickness of about 11.5Å was obtained without the consideration of quantum mechanical effects. A low leakage of less than 10−2 A/cm2 at ±1V relative to the flat band voltage was obtained for this 11.5Å equivalent oxide thickness Pt/ZrO2/Si structure. High effective dielectric breakdown and superior reliability properties have been demonstrated for ZrO2 gate dielectric.

High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process

1999 ◽  
Vol 567 ◽  
Author(s):  
S. C. Song ◽  
H. F. Luan ◽  
M. Gardner ◽  
J. Fulford ◽  
M. Allen ◽  
...  
Keyword(s):  
Thermal Process ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Complete Suppression ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Rapid Thermal Process ◽  
Electrical Stress ◽  
Boron Penetration

ABSTRACTIn this paper, we report performance and reliability of CMOS devices with ultra thin (<20Å) Si3N4gate dielectric fabricated by in-situ rapid thermal CVD (RTCVD) process, and compare with control SiO2devices of identical equivalent oxide thickness (Tox,eq). Ultra thin CVD Si3N4 devices show significantly lower gate leakage current, complete suppression of boron penetration, improved MOSFET performance, and enhanced reliability against electrical stress.

High temperature (1000 °C) compatible Y–La–Si–O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness

2011 ◽  
Vol 98 (25) ◽  
pp. 252901 ◽  
Author(s):  
C. Dubourdieu ◽  
E. Cartier ◽  
J. Bruley ◽  
M. Hopstaken ◽  
M. M. Frank ◽  
...  
Keyword(s):  
High Temperature ◽  
Direct Contact ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

1999 ◽  
Vol 592 ◽  
Author(s):  
Gerry Lucovsky ◽  
Yider Wu ◽  
Yi-Mu Lee ◽  
Hanyang Yang ◽  
Hiro Niimi
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
Plasma Processing ◽  
Tunneling Current ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Remote Plasma ◽  
Thermally Grown Oxides ◽  
Interfacial Layers ◽  
Direct Tunneling

ABSTRACTDirect tunneling limits aggressive scaling of thermally-grown oxides to about 1.6 nm, a thickness at which the tunneling current. Jg, at one volt is ∼1 A/cm2. This paper presents results that demonstrate that stacked gate dielectrics prepared by remote plasma processing that include i) ultra-thin nitrided SiO2 interfacial layers, and ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness, EOT, to 1.1-1.0 nm before Jg, > 1 A/cm2.

Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Kiju Im ◽  
Hyungsuk Jung ◽  
Sanghun Jeon ◽  
Dooyoung Yang ◽  
Hyunsang Hwang
Keyword(s):  
Electron Spectroscopy ◽  
Gate Dielectric ◽  
Tantalum Oxide ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Ammonia Treatment ◽  
High K ◽  
Mos Gate

ABSTRACTIn this paper, we report a process for the preparation of high quality amorphous tantalum oxynitride (TaOxNy) via ammonia annealing of Ta2O5 followed by wet reoxidation for use in gate dielectric applications. Compared with tantalum oxide(Ta2O5), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We confirmed nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness of less than 1.6nm and a leakage current of less than 10mA/cm2 at -1.5V. Compared with NH3 nitridation, nitridation of Ta2O5 in ND3 improve charge trapping and charge-to-breakdown characteristics of tantalum oxynitride.

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