Effects of plasma nitridation of Al2O3 interlayer on thermal stability, fixed charge density, and interfacial trap states of HfO2 gate dielectric films grown by atomic layer deposition

2003 ◽  
Vol 94 (3) ◽  
pp. 1898-1903 ◽  
Author(s):  
Hong Bae Park ◽  
Moonju Cho ◽  
Jaehoo Park ◽  
Cheol Seong Hwang ◽  
Jong-Cheol Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Atomic Layer Deposition ◽  
Charge Density ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Dielectric Films ◽  
Trap States ◽  
Fixed Charge Density ◽  
Plasma Nitridation ◽  
Layer Deposition

Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

2007 ◽  
Vol 91 (20) ◽  
pp. 203510 ◽  
Author(s):  
Carey M. Tanner ◽  
Ya-Chuan Perng ◽  
Christopher Frewin ◽  
Stephen E. Saddow ◽  
Jane P. Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Dielectric Films ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

Comparative Study on Electrical and Microstructural Characteristics of ZrO2 and HfO2 Grown by Atomic Layer Deposition

2005 ◽  
Vol 20 (11) ◽  
pp. 3125-3132 ◽  
Author(s):  
Hyoungsub Kim ◽  
Krishna C. Saraswat ◽  
Paul C. McIntyre
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Atomic Layer ◽  
Film Deposition ◽  
Dielectric Films ◽  
Amorphous Phases ◽  
Layer Deposition ◽  
Current Characteristics

Ultra-thin ZrO2 and HfO2 dielectric films grown by atomic layer deposition (ALD) are quite promising materials for gate dielectric applications in future transistors, and they exhibit significantly different as-grown microstructures: polycrystalline and amorphous phases, respectively. However, under the identical deposition conditions, both metal oxides show surprisingly similar capacitance–voltage (C–V) characteristics as a function of film thickness, implying that the identities and densities of fixed charge and bulk trapping charge are similar. Factors other than the film microstructure, such as concentration of impurities incorporated during the film deposition, are believed predominantly to control important C–V characteristics. Only the dielectric constant appears to depend significantly on the identity of the dielectric material. It is found that the dielectric constant of ALD-HfO2 (∼20) is significantly lower than that of ZrO2 (∼30) due to the differences in microstructure and also atomic density of the film. In terms of the leakage current characteristics, the effective potential barrier heights between Pt and these two dielectric films are identical (∼2.3 eV) within the experimental uncertainty. Implications for the electrode/dielectric interface electronic structure are discussed.

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition

Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O

2021 ◽  
Author(s):  
Changyu Park ◽  
Changmin Lee ◽  
Woohui Lee ◽  
Jehoon Lee ◽  
Jinyong Kim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thermal Stability Of

scholarly journals Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Youngseo An ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

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