In-line electrical characterization of ultrathin gate dielectric films

2003 ◽  
Author(s):  
F. Cubaynes ◽  
S. Passefort ◽  
K. Eason ◽  
Xiafang Zhang ◽  
L. Date ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characterization ◽  
Dielectric Films

Characterization of HfO2/Si Exposed to Water Vapor at Room Temperature

2006 ◽  
Vol 917 ◽  
Author(s):  
Carlos Driemeier ◽  
Elizandra Martinazzi ◽  
Israel J. R. Baumvol ◽  
Evgeni Gusev
Keyword(s):  
Water Vapor ◽  
Metal Oxide ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dielectric Films ◽  
Nuclear Reaction Analysis ◽  
Environmental Air

AbstractHfO2-based materials are the leading candidates to replace SiO2 as the gate dielectric in Si-based metal-oxide-semiconductor filed-effect transistors. The ubiquitous presence of water vapor in the environments to which the dielectric films are exposed (e.g. in environmental air) leads to questions about how water could affect the properties of the dielectric/Si structures. In order to investigate this topic, HfO2/SiO2/Si(001) thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i) the formation of strongly bonded hydroxyls at the HfO2 surface; ii) room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii) hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.

Compact Electrical Characterization of Nano-CMOS Transistor with 1.2nm Ultrathin Gate Dielectric

2003 ◽  
Author(s):  
Hee Sung Kang ◽  
Wu-yun Quan ◽  
Kyung Soo Kim ◽  
Chang Bong Oh ◽  
Hyuk Ju Ryu ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characterization ◽  
Cmos Transistor

On the Electrical Characterization of High-ĸ Dielectrics

MRS Bulletin ◽  
2002 ◽  
Vol 27 (3) ◽  
pp. 222-225 ◽  
Author(s):  
R. Degraeve ◽  
E. Cartier ◽  
T. Kauerauf ◽  
R. Carter ◽  
L. Pantisano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrode Materials ◽  
Gate Dielectric ◽  
Electrical Characterization ◽  
Complementary Metal Oxide Semiconductor ◽  
Dielectric Materials ◽  
Oxide Semiconductor ◽  
High Q ◽  
New Si

AbstractThe continual scaling of complementary metal oxide semiconductor (CMOS) technologies has pushed the Si-SiO2 system to its very limits and has led to the consideration of a number of alternative high-ĸ gate dielectric materials. In the end, it will be the electrical properties of the new Si/high-ĸ system that will determine its usefulness in future CMOS generations. For this reason, the study of the electrical properties of high-ĸ gate insulators is crucial. We present an overview of some of the electrical characterization techniques and reliability tests used to evaluate possible high-ĸ gate materials. Most of these techniques are well known from the characterization of SiO2 layers, but there are some additional complications, such as the presence of several different layers within one gate stack or the use of different gate electrode materials. These make the interpretation and comparison of experimental results more troublesome.

Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric

2004 ◽  
Vol 146 (3) ◽  
pp. 355-358 ◽  
Author(s):  
J. Puigdollers ◽  
C. Voz ◽  
I. Martín ◽  
M. Vetter ◽  
A. Orpella ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Electrical Characterization

Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

2007 ◽  
Vol 7 (11) ◽  
pp. 4101-4105
Author(s):  
Ahnsook Yoon ◽  
Woong-Ki Hong ◽  
Takhee Lee
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

Characterization of high-k gate dielectric films using SIMS

2003 ◽  
Vol 203-204 ◽  
pp. 516-519 ◽  
Author(s):  
T. Yamamoto ◽  
N. Morita ◽  
N. Sugiyama ◽  
A. Karen ◽  
K. Okuno
Keyword(s):  
Gate Dielectric ◽  
Dielectric Films ◽  
High K ◽  
High K Gate Dielectric
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