Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

2002 ◽  
Vol 23 (12) ◽  
pp. 704-706 ◽  
Author(s):  
H.-H. Tseng ◽  
Y. Jeon ◽  
P. Abramowitz ◽  
T.-Y. Luo ◽  
L. Hebert ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Advanced Technology ◽  
Plasma Nitridation

Plasma Nitridation of HfO2 Gate Dielectric on p-GaAs Substrates

2019 ◽  
Vol 16 (5) ◽  
pp. 387-392 ◽  
Author(s):  
G K. Dalapati ◽  
Aditya Sridhara ◽  
Andrew S. Wong ◽  
C Chia ◽  
Dongzhi Chi
Keyword(s):  
Gate Dielectric ◽  
Plasma Nitridation ◽  
Gaas Substrates

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

2001 ◽  
Vol 78 (24) ◽  
pp. 3875-3877 ◽  
Author(s):  
H. N. Al-Shareef ◽  
A. Karamcheti ◽  
T. Y. Luo ◽  
G. Bersuker ◽  
G. A. Brown ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Device Performance ◽  
Remote Plasma ◽  
Plasma Nitridation

Improvement in NBTI of Metal Gate pMOSFETs with Sub-1nm EOT HfSiON Gate Dielectric by Ar/N2/H2(D2) Plasma Nitridation

2019 ◽  
Vol 3 (3) ◽  
pp. 225-232
Author(s):  
Seiji Inumiya ◽  
Takayuki Aoyama ◽  
Yasuo Nara
Keyword(s):  
Gate Dielectric ◽  
Metal Gate ◽  
Plasma Nitridation

A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
Mitsuaki Hori ◽  
Naoyoshi Tamura ◽  
Masataka Kase ◽  
Hiroko Sakuma ◽  
Hiroyuki Ohota ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Oxide ◽  
Cmos Technology ◽  
X Ray ◽  
Plasma Nitridation ◽  
Secondary Ions ◽  
Physical Thickness

AbstractWe propose a new parameter predicating transconductance (Gm) of the gate dielectric of nitrided SiO2 with the physical thickness below 1.1 nm for high-performance transistors. The 6 different type of nitrided SiO2 are formed using the plasma nitridation or nitric oxide (NO) gas annealing in conditions to adjust a optical thickness ranging 0.96 to 1.19 nm. The material property of nitrided SiO2 are analyzed by secondary ions mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The MOSFET are fabricated using these gate dielectric and 90 nm generation CMOS technology. Then we find a good correlation between the maximum of Gm and the percentage of amount of N(SiN3)3 substructure at the total amount of NSi3 structure measured by XPS, rather than the total dose of nitrogen measured by SIMS.

Effect of Plasma Nitridation on the Conduction Mechanism of Ta2O5 Gate Dielectric

2001 ◽  
Author(s):  
Woo Hyung Lee ◽  
Kiju Im ◽  
Sanghun Joen ◽  
Hyunsang Hwang
Keyword(s):  
Conduction Mechanism ◽  
Gate Dielectric ◽  
Plasma Nitridation

Plasma Nitridation Technique for the Formation of Thermally Stable Hf-silicate Gate Dielectric with Controlled Nitrogen Profile

2002 ◽  
Author(s):  
Akio Kaneko ◽  
Yoshiki Kamata ◽  
Mizuki Ono ◽  
Masato Koyama ◽  
Akira Nishiyama ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Thermally Stable ◽  
Plasma Nitridation
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