Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

2001 ◽  
Vol 78 (24) ◽  
pp. 3875-3877 ◽  
Author(s):  
H. N. Al-Shareef ◽  
A. Karamcheti ◽  
T. Y. Luo ◽  
G. Bersuker ◽  
G. A. Brown ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Device Performance ◽  
Remote Plasma ◽  
Plasma Nitridation

Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

2002 ◽  
Vol 49 (5) ◽  
pp. 840-846 ◽  
Author(s):  
Chien-Hao Chen ◽  
Yean-Kuen Fang ◽  
Shyh-Fann Ting ◽  
Wen-Tse Hsieh ◽  
Chih-Wei Yang ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Remote Plasma ◽  
Plasma Nitridation

Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxide

2000 ◽  
Vol 611 ◽  
Author(s):  
H.N. Al-Shareef ◽  
A. Karamcheti ◽  
T.Y. Luo ◽  
G.A. Brown ◽  
V.H.C. Watt ◽  
...  
Keyword(s):  
Nitrogen Content ◽  
Leakage Current ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Process Conditions ◽  
Remote Plasma ◽  
Plasma Damage ◽  
Plasma Nitridation ◽  
Order Of Magnitude

ABSTRACTElectrical performance of in-situ steam generated (ISSG) oxide nitrided using remote plasma nitridation (RPN) has been evaluated. An equivalent oxide thickness (EOT) of 1.6 nm with gate leakage current around 5×10−3 A/cm2 (at −1.5V) has been achieved. The leakage current of remote plasma nitrided ISSG oxide is lower than that of ISSG only, where more than one order of magnitude leakage current reduction (at the same EOT) has been achieved for some RPN conditions. Moreover, it is observed that the extent to which the RPN process conditions modify device parameters such as EOT, flatband voltage (VFB), and time-to-breakdown (tbd) increases with decreasing ISSG thickness. The thinner ISSG oxides appear to be more susceptible to plasma damage and accumulation of positively charged nitrogen atoms at the oxide/Si interface. Therefore, RPN processes that use lower temperature and shorter time are preferred for very thin oxides. The nitrogen content and profile in the samples evaluated using SIMS analysis, indicate that RPN offers higher nitrogen content and better nitrogen profile compared to conventional nitrogen incorporation methods such as NO annealing [1].

GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Losurdo ◽  
P. Capezzuto ◽  
G. Bruno
Keyword(s):  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Stage ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Remote Plasma ◽  
Plasma Nitridation ◽  
Kinetics Of

AbstractCubic and hexagonal GaN layers have been grown on GaAs (001) and α-Al2O3 (0001) substrates, respectively, by remote plasma metalorganic chemical vapor deposition (RPMOCVD). In situ spectroscopic ellipsometry is used to monitor in real time the chemistry and kinetics of the GaN growth. The subtrate/GaN interface formation is highlighted and the effect of the substrate plasma nitridation on the initial growth stage is discussed.

scholarly journals GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry

1999 ◽  
Vol 4 (S1) ◽  
pp. 173-178
Author(s):  
M. Losurdo ◽  
P. Capezzuto ◽  
G. Bruno
Keyword(s):  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Stage ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Remote Plasma ◽  
Plasma Nitridation ◽  
Kinetics Of

Cubic and hexagonal GaN layers have been grown on GaAs (001) and α-Al2O3 (0001) substrates, respectively, by remote plasma metalorganic chemical vapor deposition (RP-MOCVD). In situ spectroscopic ellipsometry is used to monitor in real time the chemistry and kinetics of the GaN growth. The subtrate/GaN interface formation is highlighted and the effect of the substrate plasma nitridation on the initial growth stage is discussed.

The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyond

2001 ◽  
Vol 22 (7) ◽  
pp. 327-329 ◽  
Author(s):  
S.F. Ting ◽  
Y.K. Fang ◽  
C.H. Chen ◽  
C.W. Yang ◽  
W.T. Hsieh ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
Dielectric Films ◽  
Remote Plasma ◽  
Plasma Nitridation

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

2002 ◽  
Vol 23 (12) ◽  
pp. 704-706 ◽  
Author(s):  
H.-H. Tseng ◽  
Y. Jeon ◽  
P. Abramowitz ◽  
T.-Y. Luo ◽  
L. Hebert ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Advanced Technology ◽  
Plasma Nitridation

scholarly journals Optimization of spaceflight millimeter-wave impedance matching networks using laser trimming

2021 ◽  
pp. 1-7
Author(s):  
K. Parow-Souchon ◽  
D. Cuadrado-Calle ◽  
S. Rea ◽  
M. Henry ◽  
M. Merritt ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
Impedance Matching ◽  
Wave Impedance ◽  
Low Noise ◽  
Device Performance ◽  
Interface Circuits ◽  
Interface Circuit ◽  
Noise Amplifier

Abstract Realizing packaged state-of-the-art performance of monolithic microwave integrated circuits (MMICs) operating at millimeter wavelengths presents significant challenges in terms of electrical interface circuitry and physical construction. For instance, even with the aid of modern electromagnetic simulation tools, modeling the interaction between the MMIC and its package embedding circuit can lack the necessary precision to achieve optimum device performance. Physical implementation also introduces inaccuracies and requires iterative interface component substitution that can produce variable results, is invasive and risks damaging the MMIC. This paper describes a novel method for in situ optimization of packaged millimeter-wave devices using a pulsed ultraviolet laser to remove pre-selected areas of interface circuit metallization. The method was successfully demonstrated through the optimization of a 183 GHz low noise amplifier destined for use on the MetOp-SG meteorological satellite series. An improvement in amplifier output return loss from an average of 12.9 dB to 22.7 dB was achieved across an operational frequency range of 175–191 GHz and the improved circuit reproduced. We believe that our in situ tuning technique can be applied more widely to planar millimeter-wave interface circuits that are critical in achieving optimum device performance.

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