Plasma damage and photo-annealing effects of thin gate oxides and oxynitrides during O2 plasma exposure

1996 ◽  
Vol 17 (3) ◽  
pp. 82-84 ◽  
Author(s):  
K. Lai ◽  
K. Kumar ◽  
A. Chou ◽  
J.C. Lee
Keyword(s):  
Plasma Exposure ◽  
Plasma Damage ◽  
Gate Oxides ◽  
Annealing Effects ◽  
O2 Plasma

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

2019 ◽  
Vol 19 (2) ◽  
pp. 155-161 ◽  
Author(s):  
Kwan Hong Min ◽  
Sungjin Choi ◽  
Myeong Sang Jeong ◽  
Min Gu Kang ◽  
Sungeun Park ◽  
...  
Keyword(s):  
Plasma Exposure ◽  
Interface Characteristics ◽  
O2 Plasma

scholarly journals The Degradation of Cellulose by Radio Frequency Plasma

Fibers ◽  
2018 ◽  
Vol 6 (3) ◽  
pp. 61 ◽  
Author(s):  
Larissa Shepherd ◽  
Margaret Frey
Keyword(s):  
Power Density ◽  
High Power ◽  
Radio Frequency Plasma ◽  
High Power Density ◽  
Plasma Exposure ◽  
Cellulose Structure ◽  
Structure Degradation ◽  
Frequency Plasma ◽  
Cotton Yarns ◽  
O2 Plasma

This paper describes the results of using oxygen (O2) plasma to treat both greige and scoured cotton yarns to cause significant degradation of cellulose. This study is an effort to reduce hazardous caustic chemicals commonly used to make the cellulose molecule more accessible for uses in such applications as biofuels. Through high power density, 0.46 W/cm2, and the study of varying exposure times, we find longer durations of 30 min to 90 min result in significant cellulose structure degradation. Due to waxes and contaminants found on greige yarns, scoured yarn degradation occurs at shorter exposure times than greige yarns, however, both experience tearing and pitting with longer exposures. This study provides evidence that significant degradation of cellulosic yarns can be achieved through high power density O2 plasma exposure.

Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure

2019 ◽  
Vol 1 (2) ◽  
pp. 210-219 ◽  
Author(s):  
Pavel Bolshakov ◽  
Christopher M. Smyth ◽  
Ava Khosravi ◽  
Peng Zhao ◽  
Paul K. Hurley ◽  
...  
Keyword(s):  
Plasma Exposure ◽  
Dual Gate ◽  
Contact Engineering ◽  
O2 Plasma

Effect Of O2 Plasma Exposure On The Performance Of Polycrystalline Silicon Thin Film Transistors

1994 ◽  
Vol 345 ◽  
Author(s):  
Chul Ha Kim ◽  
Il Lee ◽  
Ki Soo Sohn ◽  
Su Chul Chun ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Plasma Exposure ◽  
Silicon Thin Film ◽  
Current Ratio ◽  
Si Thin Film ◽  
O2 Plasma

AbstractWe have studied the effect of O2 plasma exposure on the performance of polycrystalline silicon (poly-Si) thin film transistor (TFTs). The field effect mobility is increased and the drain currents at negative gate voltages are reduced by O2 plasma exposure on the surface of the TFT. These improvements in the performance of the poly-Si TFTs are larger in offset structure compared to overlap one. We obtained the on/off current ratio of ∼ 108 after O2 plasma exposure for the poly-Si TFTs with 3 or 4 μm offset length.

scholarly journals Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide

2021 ◽  
Vol 39 (5) ◽  
pp. 052408
Author(s):  
Hanno Kröncke ◽  
Florian Maudet ◽  
Sourish Banerjee ◽  
Jürgen Albert ◽  
Sven Wiesner ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Exposure Time ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Layer Deposition ◽  
Plasma Exposure Time ◽  
O2 Plasma

Controlled Free Edge Effects in Surface Wrinkling via Combination of External Straining and Selective O2 Plasma Exposure

Langmuir ◽  
2013 ◽  
Vol 29 (23) ◽  
pp. 7170-7177 ◽  
Author(s):  
Yang Yang ◽  
Xue Han ◽  
Weilian Ding ◽  
Shichun Jiang ◽  
Yanping Cao ◽  
...  
Keyword(s):  
Edge Effects ◽  
Free Edge ◽  
Plasma Exposure ◽  
Surface Wrinkling ◽  
O2 Plasma

scholarly journals Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

2011 ◽  
Vol 29 (4) ◽  
pp. 041301 ◽  
Author(s):  
Masanaga Fukasawa ◽  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Yoshinori Takao ◽  
Koji Eriguchi ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Si Substrate ◽  
Plasma Damage ◽  
O2 Plasma

Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation

2001 ◽  
Vol 397 (1-2) ◽  
pp. 90-94 ◽  
Author(s):  
C.Y. Wang ◽  
J.Z. Zheng ◽  
Z.X. Shen ◽  
Y. Lin ◽  
A.T.S. Wee
Keyword(s):  
Plasma Damage ◽  
Methyl Silsesquioxane ◽  
Low K ◽  
O2 Plasma

Effects of He and Ar ion kinetic energies in protection of organosilicate glass from O2 plasma damage

2013 ◽  
Vol 31 (4) ◽  
pp. 041303 ◽  
Author(s):  
Joe Lee ◽  
Haseeb Kazi ◽  
Sneha Gaddam ◽  
Jeffry A. Kelber ◽  
David B. Graves
Keyword(s):  
Plasma Damage ◽  
Organosilicate Glass ◽  
O2 Plasma

Plasma damage reduction by using ISSG gate oxides

2003 ◽  
Author(s):  
G. Cellere ◽  
M.G. Valentini ◽  
M. Caminati ◽  
M.E. Vitali ◽  
A. Moro ◽  
...  
Keyword(s):  
Plasma Damage ◽  
Gate Oxides ◽  
Damage Reduction
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