Plasma damage reduction by using ISSG gate oxides

2003 ◽  
Author(s):  
G. Cellere ◽  
M.G. Valentini ◽  
M. Caminati ◽  
M.E. Vitali ◽  
A. Moro ◽  
...  
Keyword(s):  
Plasma Damage ◽  
Gate Oxides ◽  
Damage Reduction

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

High-k gate oxides integration of graphene based infrared detector

2012 ◽  
Vol 31 (2) ◽  
pp. 118-121
Author(s):  
Peng ZHOU ◽  
Hong-Qiang WEI ◽  
Qing-Qing SUN ◽  
Li YE ◽  
Lin CHEN ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Gate Oxides ◽  
High K

Logistic model for leakage current in electrical stressed ultra-thin gate oxides

2003 ◽  
Vol 39 (9) ◽  
pp. 749 ◽  
Author(s):  
E. Miranda ◽  
A. Cester ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Logistic Model ◽  
Gate Oxides

scholarly journals Characterizing Color Quality, Damage to Artwork, and Light Intensity of Multi-Primary LEDs for Museums

Heritage ◽  
2021 ◽  
Vol 4 (1) ◽  
pp. 188-197
Author(s):  
Dorukalp Durmus
Keyword(s):  
Energy Efficiency ◽  
Appearance Model ◽  
Light Sources ◽  
Great Flexibility ◽  
Oil Paintings ◽  
Damage Reduction ◽  
Output Variability ◽  
Color Quality ◽  
Trade Offs

Light causes damage when it is absorbed by sensitive artwork, such as oil paintings. However, light is needed to initiate vision and display artwork. The dilemma between visibility and damage, coupled with the inverse relationship between color quality and energy efficiency, poses a challenge for curators, conservators, and lighting designers in identifying optimal light sources. Multi-primary LEDs can provide great flexibility in terms of color quality, damage reduction, and energy efficiency for artwork illumination. However, there are no established metrics that quantify the output variability or highlight the trade-offs between different metrics. Here, various metrics related to museum lighting (damage, the color quality of paintings, illuminance, luminous efficacy of radiation) are analyzed using a voxelated 3-D volume. The continuous data in each dimension of the 3-D volume are converted to discrete data by identifying a significant minimum value (unit voxel). Resulting discretized 3-D volumes display the trade-offs between selected measures. It is possible to quantify the volume of the graph by summing unique voxels, which enables comparison of the performance of different light sources. The proposed representation model can be used for individual pigments or paintings with numerous pigments. The proposed method can be the foundation of a damage appearance model (DAM).

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