Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

2019 ◽  
Vol 19 (2) ◽  
pp. 155-161 ◽  
Author(s):  
Kwan Hong Min ◽  
Sungjin Choi ◽  
Myeong Sang Jeong ◽  
Min Gu Kang ◽  
Sungeun Park ◽  
...  
Keyword(s):  
Plasma Exposure ◽  
Interface Characteristics ◽  
O2 Plasma

scholarly journals The Degradation of Cellulose by Radio Frequency Plasma

Fibers ◽  
2018 ◽  
Vol 6 (3) ◽  
pp. 61 ◽  
Author(s):  
Larissa Shepherd ◽  
Margaret Frey
Keyword(s):  
Power Density ◽  
High Power ◽  
Radio Frequency Plasma ◽  
High Power Density ◽  
Plasma Exposure ◽  
Cellulose Structure ◽  
Structure Degradation ◽  
Frequency Plasma ◽  
Cotton Yarns ◽  
O2 Plasma

This paper describes the results of using oxygen (O2) plasma to treat both greige and scoured cotton yarns to cause significant degradation of cellulose. This study is an effort to reduce hazardous caustic chemicals commonly used to make the cellulose molecule more accessible for uses in such applications as biofuels. Through high power density, 0.46 W/cm2, and the study of varying exposure times, we find longer durations of 30 min to 90 min result in significant cellulose structure degradation. Due to waxes and contaminants found on greige yarns, scoured yarn degradation occurs at shorter exposure times than greige yarns, however, both experience tearing and pitting with longer exposures. This study provides evidence that significant degradation of cellulosic yarns can be achieved through high power density O2 plasma exposure.

Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure

2019 ◽  
Vol 1 (2) ◽  
pp. 210-219 ◽  
Author(s):  
Pavel Bolshakov ◽  
Christopher M. Smyth ◽  
Ava Khosravi ◽  
Peng Zhao ◽  
Paul K. Hurley ◽  
...  
Keyword(s):  
Plasma Exposure ◽  
Dual Gate ◽  
Contact Engineering ◽  
O2 Plasma

Effect Of O2 Plasma Exposure On The Performance Of Polycrystalline Silicon Thin Film Transistors

1994 ◽  
Vol 345 ◽  
Author(s):  
Chul Ha Kim ◽  
Il Lee ◽  
Ki Soo Sohn ◽  
Su Chul Chun ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Plasma Exposure ◽  
Silicon Thin Film ◽  
Current Ratio ◽  
Si Thin Film ◽  
O2 Plasma

AbstractWe have studied the effect of O2 plasma exposure on the performance of polycrystalline silicon (poly-Si) thin film transistor (TFTs). The field effect mobility is increased and the drain currents at negative gate voltages are reduced by O2 plasma exposure on the surface of the TFT. These improvements in the performance of the poly-Si TFTs are larger in offset structure compared to overlap one. We obtained the on/off current ratio of ∼ 108 after O2 plasma exposure for the poly-Si TFTs with 3 or 4 μm offset length.

scholarly journals Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide

2021 ◽  
Vol 39 (5) ◽  
pp. 052408
Author(s):  
Hanno Kröncke ◽  
Florian Maudet ◽  
Sourish Banerjee ◽  
Jürgen Albert ◽  
Sven Wiesner ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Exposure Time ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Layer Deposition ◽  
Plasma Exposure Time ◽  
O2 Plasma

Controlled Free Edge Effects in Surface Wrinkling via Combination of External Straining and Selective O2 Plasma Exposure

Langmuir ◽  
2013 ◽  
Vol 29 (23) ◽  
pp. 7170-7177 ◽  
Author(s):  
Yang Yang ◽  
Xue Han ◽  
Weilian Ding ◽  
Shichun Jiang ◽  
Yanping Cao ◽  
...  
Keyword(s):  
Edge Effects ◽  
Free Edge ◽  
Plasma Exposure ◽  
Surface Wrinkling ◽  
O2 Plasma

scholarly journals Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

Processes ◽  
2021 ◽  
Vol 9 (9) ◽  
pp. 1599
Author(s):  
Dongling Li ◽  
Xiaohan Cui ◽  
Mao Du ◽  
Ying Zhou ◽  
Fenfen Lan
Keyword(s):  
Bonding Strength ◽  
Energy State ◽  
Chemical Activation ◽  
Bonding Interface ◽  
Activation Process ◽  
Plasma Activation ◽  
Interface Characteristics ◽  
Wafer Direct Bonding ◽  
O2 Plasma ◽  
Si Wafer

Wafer direct bonding is an attractive approach to manufacture future micro-electro-mechanical system (MEMS) and microelectronic and optoelectronic devices. In this paper, a combined hydrophilic activated Si/Si wafer direct bonding process based on wet chemical activation and O2 plasma activation is explored. Additionally, the effect on bonding interface characteristics is comprehensively investigated. The mechanism is proposed to better understand the nature of hydrophilic bonding. The water molecule management is controlled by O2 plasma activation process. According to the contact angle measurement and FTIR spectrum analysis, it can be concluded that water molecules play an important role in the type and density of chemical bonds at the bonding interface, which influence both bonding strength and voids’ characteristics. When annealed at 350 °C, a high bonding strength of more than 18.58 MPa is obtained by tensile pulling test. Cross sectional SEM and TEM images show a defect-free and tightly bonded interface with an amorphous SiOx layer of 3.58 nm. This amorphous SiOx layer will induce an additional energy state, resulting in a lager resistance. These results can facilitate a better understanding of low-temperature hydrophilicity wafer direct bonding and provide possible guidance for achieving good performance of homogenous and heterogenous wafer direct bonding.

Mercury spreading on silver films: interface characteristics

1998 ◽  
Vol 77 (5) ◽  
pp. 1427-1436
Author(s):  
L. Kaplan, A. Shehter, Y. Lereah, H.Ta
Keyword(s):  
Silver Films ◽  
Interface Characteristics

Plasminogen Depletion during Streptokinase Treatment or Two-Chain Urokinase Incubation Correlates with Decreased Clot Lysability Ex Vivo and In Vitro

1993 ◽  
Vol 70 (06) ◽  
pp. 0998-1004 ◽  
Author(s):  
Páll T Önundarson ◽  
H Magnús Haraldsson ◽  
Lena Bergmann ◽  
Charles W Francis ◽  
Victor J Marder
Keyword(s):  
Myocardial Infarction ◽  
Ex Vivo ◽  
Time Dependent ◽  
State Variables ◽  
Thrombolytic Treatment ◽  
Direct Proportion ◽  
Plasmin Activity ◽  
Plasma Exposure ◽  
The Relationship

SummaryThe relationship between lytic state variables and ex vivo clot lysability was investigated in blood drawn from patients during streptokinase administration for acute myocardial infarction. A lytic state was already evident after 5 min of treatment and after 20 min the plasminogen concentration had decreased to 24%, antiplasmin to 7% and fibrinogen 0.2 g/1. Lysis of radiolabeled retracted clots in the patient plasmas decreased from 37 ± 8% after 5 min to 21 ± 8% at 10 min and was significantly lower (8 ± 9%, p <0.005) in samples drawn at 20, 40 and 80 min. Clot lysability correlated positively with the plasminogen concentration (r = 0.78, p = 0.003), but not with plasmin activity. Suspension of radiolabeled clots in normal plasma pre-exposed to 250 U/ml two-chain urokinase for varying time to induce an in vitro lytic state was also associated with decreasing clot lysability in direct proportion with the duration of prior plasma exposure to urokinase. The decreased lysability correlated with the time-dependent reduction in plasminogen concentration (r = 0.88, p <0.0005). Thus, clot lysability decreases in conjunction with the development of the lytic state and the associated plasminogen depletion. The lytic state may therefore limit reperfusion during thrombolytic treatment.

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

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