scholarly journals Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

2011 ◽  
Vol 29 (4) ◽  
pp. 041301 ◽  
Author(s):  
Masanaga Fukasawa ◽  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Yoshinori Takao ◽  
Koji Eriguchi ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Si Substrate ◽  
Plasma Damage ◽  
O2 Plasma

Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

1999 ◽  
Vol 28 (3) ◽  
pp. 225-227 ◽  
Author(s):  
Jipo Huang ◽  
Lianwei Wang ◽  
Qinwo Shen ◽  
Chenglu Lin ◽  
Mikael Östling
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Si Substrate

Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam

1984 ◽  
Vol 37 ◽  
Author(s):  
I. Yamada ◽  
C. J. Palmstrøm ◽  
E. Kennedy ◽  
J. W. Mayer ◽  
H. Inokawa ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Life Time ◽  
Cluster Beam ◽  
Clean Surface ◽  
Si Substrate ◽  
Thermal Stability Of

AbstractEpitaxial Al films have been deposited onto the clean surface of single-crystal Si by ionized cluster beam (ICB) at room temperature. Thermal stability of the film has been examined by SEM, AES depth profiling, ion backscat. tering/channeling, and electrical characterization of the Al-Si interface. It was found that the ICB Al film on Si substrate was remarkably stable up to 550°C although pure Al was used. Alloy penetration at the interface, shift of barrier height, degradation of crystalline quality and development of annealing hillocks on the surface were not observed after the heat treatment. Extremely long electromigration life time was also confirmed. Epitaxial growth on GaAs(100) substrate was attempted and preliminary results are given.

scholarly journals Electrical characterization of low temperature deposited oxide films on ZnO/n-Si substrate

2003 ◽  
Vol 26 (7) ◽  
pp. 693-697 ◽  
Author(s):  
S. K. Nandi ◽  
S. Chatterjee ◽  
S. K. Samanta ◽  
P. K. Bose ◽  
C. K. Maiti
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Si Substrate

Characterization of Difference Size of IDE Pattern for Formaldehyde Detection Sensor

2015 ◽  
Vol 754-755 ◽  
pp. 917-922 ◽  
Author(s):  
M. Zaki ◽  
Uda Hashim ◽  
Mohd Khairuddin Md Arshad ◽  
M.F.M. Fathil ◽  
A.H. Azman ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Electrical Characterization ◽  
Gas Detection ◽  
Si Substrate ◽  
Hard Mask ◽  
Large Size ◽  
Mask Design ◽  
The Ideal

This paper studies the effect of different gap sizes of IDE pattern on the surface morphology and electrical properties for the formaldehyde detection sensor. Two types of IDE chrome mask are designed to determine the ideal IDE pattern for formaldehyde gas detection by using conventional lithography. In the first method, IDE is transferred onto SiO2layer. In order to ensure that the perfect pattern with minimum defect structure is obtained, the process parameters should be optimized and controlled. In the second method, the aluminium is deposited directly on SiO2/Si substrate by using IDE hard mask design plate. The fabricated IDE pattern is further validated through morphological and electrical characterization. The average gap size of IDE sensor is approximately 100 μm and 400 μm for IDE chrome and IDE hard mask respectively. The latter method is preferable since for formaldehyde gas sensing large size is needed and moreover the process is simple and requires low cost. Characterization of difference IDE pattern is demonstrated by various measurements.

Electrical characterization of C-coated nickel silicide nanowires grown on Ni-loaded Si substrate

2004 ◽  
Vol 21 (6) ◽  
pp. 1240-1244 ◽  
Author(s):  
Kyung Sun Lee ◽  
Seung Hyun Lee ◽  
Young Hwan Mo ◽  
Kee Suk Nahm ◽  
Ju Jin Kim ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Nickel Silicide ◽  
Si Substrate

Oxide Degradation Resulting from Photoresist Ashing

1993 ◽  
Vol 309 ◽  
Author(s):  
P. I. Mikulan ◽  
T. T. Koo ◽  
O. O. Awadelkarim ◽  
S. J. Fonash ◽  
T. Ta ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Deep Level ◽  
Electrical Characterization ◽  
Si Substrate ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Degradation ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Mos Structures

AbstractIn this study, possible SiO2 damage that could result from several different photoresist ashing techniques has been assessed using patterned photoresist over blanket oxides. The types of ashing systems used were RF power (RF), upstream ozone generator (Upstream) and two microwave power reactors (Microwave 1 and Microwave 2). Aluminum capacitors were evaporated on the samples after the ashing for oxide evaluation. Electrical characterization of these MOS structures included capacitance verses voltage and time dependent dielectric breakdown measurements. We also looked for Si substrate damage in these samples using deep level transient spectroscopy and Schottky barrier current-voltage measurements. This characterization showed oxide damage varied widely with ashing tool. In all cases, however, there was no significant Si substrate damage.

Fabrication and Temperature Dependent Electrical Characterization of n-ZnO Nanowires/p-Si Substrate Heterojunction Diodes

2017 ◽  
Vol 12 (10) ◽  
pp. 1162-1166 ◽  
Author(s):  
H. Algarni ◽  
R. I. Badran ◽  
M. Ajmal Khan ◽  
Fredj Hassen ◽  
S. H. Kim ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Zno Nanowires ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Heterojunction Diodes

Electrical characterization of the Si substrate in magnetically enhanced or conventional reactive-ion-etch-exposed SiO/sub 2//p-Si structures

1993 ◽  
Vol 14 (4) ◽  
pp. 167-169 ◽  
Author(s):  
O.O. Awadelkarim ◽  
T. Gu ◽  
R.A. Ditizio ◽  
P.I. Mikulan ◽  
S.J. Fonash ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Si Substrate
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