2003 8th International Symposium Plasma- and Process-Induced Damage.
Latest Publications

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Published By IEEE

0780377478

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Prediction of plasma charging damage during SiO/sub 2/ etching by VicAddress

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200930 ◽

2003 ◽

Author(s):

T. Yagisawa ◽

T. Ohmori ◽

T. Shimada ◽

T. Makabe

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Metal gate and high-k integration for advanced CMOS devices

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200913 ◽

2003 ◽

Author(s):

B. Guillaumot ◽

X. Garros ◽

F. Lime ◽

K. Oshima ◽

J.A. Chroboczek ◽

...

Keyword(s):

Metal Gate ◽

High K

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Effect of the process flow on negative-bias-temperature-instability

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200943 ◽

2003 ◽

Cited By ~ 4

Author(s):

A. Scarpa ◽

L. van Marwijk ◽

A. Cacciato ◽

F. Ballarin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Process Flow ◽

Temperature Instability ◽

Bias Temperature Instability

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Yield improvement by reducing charge-up damage of double polysilicon capacitors during via etch

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200924 ◽

2003 ◽

Author(s):

V. Beugin ◽

M. Richard

Keyword(s):

Yield Improvement

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CMOS downscaling and process induced damages

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1199718 ◽

2003 ◽

Author(s):

H. Iwai

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Investigation of gate oxide quality as a function of downstream plasma exposure during flash memory fabrication

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200931 ◽

2003 ◽

Author(s):

S. Giancaterina ◽

J.-P. Rebrasse ◽

B. Lecohier ◽

O. Keller ◽

M. Martinetti ◽

...

Keyword(s):

Flash Memory ◽

Gate Oxide ◽

Plasma Exposure

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Process induced damages from various integrated circuit interconnection designs - limitations of antenna rule under practical integrated circuit layout practice

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200948 ◽

2003 ◽

Cited By ~ 1

Author(s):

J. Mercier ◽

T. Dao ◽

H. Flechner ◽

B. Jean ◽

D.B. Oscar ◽

...

Keyword(s):

Integrated Circuit ◽

Circuit Layout

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Systematic deprocessing: a technique for identification of the origins of process-induced damage and threshold voltage shifts

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1199724 ◽

2003 ◽

Author(s):

A.J. Fischer ◽

A.T. Krishnan ◽

C. Kaneshige ◽

Qi-Zhong Hong ◽

S. Krishnan

Keyword(s):

Threshold Voltage

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The effect of fluorine in an advanced CMOS process with triple (1.6/2.2/5.2 nm) nitrided gate oxide

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200945 ◽

2003 ◽

Cited By ~ 1

Author(s):

T.B. Hook ◽

R. Kontra ◽

J. Burnham ◽

M. Lavoie

Keyword(s):

Gate Oxide ◽

Cmos Process

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Ion orbits in electron shading damage

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200926 ◽

2003 ◽

Author(s):

T. Madziwa-Nussinov ◽

D. Arnush ◽

F.F. Chen

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2003 8th International Symposium Plasma- and Process-Induced Damage.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Prediction of plasma charging damage during SiO/sub 2/ etching by VicAddress

Metal gate and high-k integration for advanced CMOS devices

Effect of the process flow on negative-bias-temperature-instability

Yield improvement by reducing charge-up damage of double polysilicon capacitors during via etch

CMOS downscaling and process induced damages

Investigation of gate oxide quality as a function of downstream plasma exposure during flash memory fabrication

Process induced damages from various integrated circuit interconnection designs - limitations of antenna rule under practical integrated circuit layout practice

Systematic deprocessing: a technique for identification of the origins of process-induced damage and threshold voltage shifts

The effect of fluorine in an advanced CMOS process with triple (1.6/2.2/5.2 nm) nitrided gate oxide

Ion orbits in electron shading damage

2003 8th International Symposium Plasma- and Process-Induced Damage.
Latest Publications