Effects of He and Ar ion kinetic energies in protection of organosilicate glass from O2 plasma damage

2013 ◽  
Vol 31 (4) ◽  
pp. 041303 ◽  
Author(s):  
Joe Lee ◽  
Haseeb Kazi ◽  
Sneha Gaddam ◽  
Jeffry A. Kelber ◽  
David B. Graves
Keyword(s):  
Plasma Damage ◽  
Organosilicate Glass ◽  
O2 Plasma

Nanoporous Materials Integration Into Advanced Microprocessors

2005 ◽  
Vol 863 ◽  
Author(s):  
E. Todd Ryan ◽  
Cathy Labelle ◽  
Satya Nitta ◽  
Nicholas C.M. Fuller ◽  
Griselda Bonilla ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Nanoporous Materials ◽  
Plasma Damage ◽  
Interlayer Dielectric ◽  
Materials Integration ◽  
Nanoporous Films ◽  
Organosilicate Glass ◽  
Barrier Metal ◽  
Metal Liner ◽  
Nanoporous Surface

AbstractFuture microprocessor technologies will require interlayer dielectric (ILD) materials with a dielectric constant (κ-value) less than 2.5. Organosilicate glass (OSG) materials must be nanoporous to meet this demand. However, the introduction of nanopores creates many integration challenges. These challenges include 1) integrating nanoporous films with low mechanical strength into conventional process flows, 2) managing etch profiles, 3) processinduced damage to the nanoporous ILD, and 4) controlling the metal/nanoporous ILD interface. This paper reviews research to maximize mechanical strength by engineering optimal pore structures, controlling trench bottom roughness induced by etching and understanding its relationship to pore size, repairing plasma damage using silylation chemistry, and sealing a nanoporous surface for barrier metal (liner) deposition.

Oxygen radical and plasma damage of low-k organosilicate glass materials: Diffusion-controlled mechanism for carbon depletion

2009 ◽  
Vol 106 (1) ◽  
pp. 013311 ◽  
Author(s):  
M. A. Goldman ◽  
D. B. Graves ◽  
G. A. Antonelli ◽  
S. P. Behera ◽  
J. A. Kelber
Keyword(s):  
Oxygen Radical ◽  
Plasma Damage ◽  
Diffusion Controlled ◽  
Organosilicate Glass ◽  
Low K

scholarly journals Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

2011 ◽  
Vol 29 (4) ◽  
pp. 041301 ◽  
Author(s):  
Masanaga Fukasawa ◽  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Yoshinori Takao ◽  
Koji Eriguchi ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Si Substrate ◽  
Plasma Damage ◽  
O2 Plasma

Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation

2001 ◽  
Vol 397 (1-2) ◽  
pp. 90-94 ◽  
Author(s):  
C.Y. Wang ◽  
J.Z. Zheng ◽  
Z.X. Shen ◽  
Y. Lin ◽  
A.T.S. Wee
Keyword(s):  
Plasma Damage ◽  
Methyl Silsesquioxane ◽  
Low K ◽  
O2 Plasma

Extent of plasma damage to porous organosilicate films characterized with nanoindentation, x-ray reflectivity, and surface acoustic waves

2006 ◽  
Vol 21 (12) ◽  
pp. 3161-3167 ◽  
Author(s):  
F. Iacopi ◽  
Y. Travaly ◽  
M. Van Hove ◽  
A.M. Jonas ◽  
J.M. Molina-Aldareguia ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Physical Analysis ◽  
Depth Sensing ◽  
Accurate Analysis ◽  
Plasma Damage ◽  
X Ray ◽  
Analysis Techniques ◽  
Direct Exposure ◽  
Organosilicate Glass

It is known that porous organosilicate glass (OSG) dielectrics tend to lose functional groups and become denser upon the chemical and physical action of the plasmas, but an accurate analysis and estimation of the depth and degree of film densification is not straightforward. In this study, we show that the combination of techniques like x-ray reflectivity, surface acoustic waves, and nanoindentation in depth-sensing and modulus mapping mode allow a complete and self-consistent physical analysis of the damage induced by the direct exposure of porous OSG films to different plasma ambients in reactive ion etching mode. We demonstrate for the chosen dielectric that the characteristics of the damage regions such as density and elastic modulus are very similar regardless of the reducing or oxidizing nature of the plasma. Nevertheless, the physical depth of the damage region shows large variation. Capabilities and limitations of each of the chosen analysis techniques are also discussed.

Plasma damage effects on low-k porous organosilicate glass

2010 ◽  
Vol 108 (9) ◽  
pp. 094110 ◽  
Author(s):  
H. Ren ◽  
G. A. Antonelli ◽  
Y. Nishi ◽  
J. L. Shohet
Keyword(s):  
Plasma Damage ◽  
Organosilicate Glass ◽  
Low K

Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k ≤ 2.4.

2003 ◽  
Vol 766 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Mark L. O'Neill ◽  
Jean L. Vincent ◽  
Aaron S. Lukas ◽  
Brian K. Peterson ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Mechanical Strength ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicate Glass

AbstractWe report on our work to develop a process for depositing nanoporous organosilicate (OSG) films via plasma enhanced chemical vapor deposition (PECVD). This approach entails codepositing an OSG material with a plasma polymerizable hydrocarbon, followed by thermal annealing of the material to remove the porogen, leaving an OSG matrix with nano-sized voids. The dielectric constant of the final film is controlled by varying the ratio of porogen precursor to OSG precursor in the delivery gas. Because of the need to maintain the mechanical strength of the final material, diethoxymethylsilane (DEMS) is utilized as the OSG precursor. Utilizing this route we are able to deposit films with a dielectric constant of 2.55 to 2.20 and hardness of 0.7 to 0.3 GPa, respectively.

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

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