Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide

1993 ◽  
Vol 14 (6) ◽  
pp. 304-306 ◽  
Author(s):  
Y. Taur ◽  
S. Cohen ◽  
S. Wind ◽  
T. Lii ◽  
C. Hsu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Polysilicon Gate

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bojun Zhang ◽  
Dennis M. Maher ◽  
Mark S. Denker ◽  
Mark A. Ray
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Depth Profiling ◽  
Gate Oxide ◽  
Annealing Condition ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Diffusion Behavior ◽  
Polysilicon Gate

ABSTRACTWe report a systematic study of dopant diffusion behavior for thin gate oxides and polysilicon implanted gate structures. Boron behavior is emphasized and its behavior is compared to that of As+ and BF2+. Dopant activation is achieved by rapid thermal annealing. Test structures with 100 Å, 60 Å and 30 Å gate oxides and ion implanted polysilicon gate electrodes were fabricated and characterized after annealing by SIMS, SEM, TEM, and C-V rpeasurements. For arsenic implanted structures, no dopant diffusion through a gate oxide of 30 Å thickness and an annealing condition as high as 1 100*C/1Os was observed. For boron implanted structures, as indicated by SIMS depth profiling, structures annealed at 1000*C/10s exhibit a so-called critical condition for boron diffusion through a 30 Å gate oxide. Boron dopant penetration is clearly observed for 60 Å gate oxides at an annealing condition of 1050 0C/10s. The flatband voltage shift can be as high as 0.56 volts as indicated by C-V measurements for boron penetrated gate oxides. However, 100 Å gate oxides are good diffusion barriers for boron at an annealing condition of 1100°C/10s. For BF2 implanted structures, the diffusion behavior is consistent with behavior reported in the literature.

Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N2O Nitrided Gate Oxide and N2O Polysilicon Gate Reoxidation

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5507-5509
Author(s):  
Chao Sung Lai ◽  
Tien Sheng Chao ◽  
Tan Fu Lei ◽  
Chung Len Lee ◽  
Tiao Yuan Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Polysilicon Gate

Improvement of Reliability of MOSFET's with N2O Nitrided Gate Oxide and N2O Polysilicon Gate Reoxidation

1997 ◽  
Author(s):  
Chao Sung Lai ◽  
T. S. Chao ◽  
Tan Fu Lei ◽  
Cheng Len Lee ◽  
T. W. Huang ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Polysilicon Gate

Study of metal gate work function modulation using plasma and SiH4 treated TiN thin films

2003 ◽  
Vol 786 ◽  
Author(s):  
F. Fillot ◽  
S. Maîtrejean ◽  
T. Farjot ◽  
B. Guillaumot ◽  
B. Chenevier ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Film Growth ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Flat Band ◽  
Metal Gate ◽  
Polysilicon Gate ◽  
Tin Thin Films ◽  
Tin Metal

ABSTRACTAs gate oxide thickness decreases, the capacitance associated with the depleted layer in polysilicon gate becomes significant, making it necessary to consider alternative gate electrodes. Titanium nitride (TiN) films elaborated with TiCl4 precursor is widely studied as metal gate in semi-conductor technology. In this work, a study of TiN metal gate deposited by MOCVD using TDMAT (Tetrakisdimethylamino titanium) precursor is proposed. N2, H2 plasma application and SiH4 treatment after TiN thin film growth modify composition and microstructure. Consequently, they alter the physical properties of films. Such treatments may be a way to modulate work function and thus to control threshold voltage.Metallic layers were deposited in a chamber using a commercial 8 inch wafer deposition tool. In this study, structural and compositional properties of TiN were correlated with work function measurements. Firstly, the composition evolution (carbon content) was studied by AES and SIMS as a function of plasma and SiH4 treatments; XRD gave details on the microstructure. Secondly, MOS structures were processed on uniformly p-type doped wafers. C-V curves of capacitors were used to estimate the flat band voltage (VFB) and gave access to the work function, the effect of oxide fixed charges and the density of interface states. It is shown that as-deposited amorphous films exhibit a work function of 4.4 eV. Exposure to SiH4 is shown to increase this work function of about 150 meV. Thin films properties are not impacted by anneal treatments. Work function stability was tested at 425 °C, 900 °C and 1050 °C. Thermodynamic compatibility with gate oxide was verified thanks to experimental results and calculations.

Effect of Polysilicon Gate Pattern/Doping Sequence on Gate Oxide Degradation

1987 ◽  
Vol 134 (11) ◽  
pp. 2935-2937 ◽  
Author(s):  
Martin A. Taylor ◽  
Dervin L. Flowers ◽  
Richard Cosway
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation ◽  
Polysilicon Gate
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