Effect of Polysilicon Gate Pattern/Doping Sequence on Gate Oxide Degradation

1987 ◽  
Vol 134 (11) ◽  
pp. 2935-2937 ◽  
Author(s):  
Martin A. Taylor ◽  
Dervin L. Flowers ◽  
Richard Cosway
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation ◽  
Polysilicon Gate

Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation

1999 ◽  
Author(s):  
Kenneth G. Moerschel ◽  
W. A. Possanza ◽  
James Sung ◽  
M. A. Prozonic ◽  
T. Long ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gate Oxide ◽  
Manufacturing Technique ◽  
Oxide Degradation

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bojun Zhang ◽  
Dennis M. Maher ◽  
Mark S. Denker ◽  
Mark A. Ray
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Depth Profiling ◽  
Gate Oxide ◽  
Annealing Condition ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Diffusion Behavior ◽  
Polysilicon Gate

ABSTRACTWe report a systematic study of dopant diffusion behavior for thin gate oxides and polysilicon implanted gate structures. Boron behavior is emphasized and its behavior is compared to that of As+ and BF2+. Dopant activation is achieved by rapid thermal annealing. Test structures with 100 Å, 60 Å and 30 Å gate oxides and ion implanted polysilicon gate electrodes were fabricated and characterized after annealing by SIMS, SEM, TEM, and C-V rpeasurements. For arsenic implanted structures, no dopant diffusion through a gate oxide of 30 Å thickness and an annealing condition as high as 1 100*C/1Os was observed. For boron implanted structures, as indicated by SIMS depth profiling, structures annealed at 1000*C/10s exhibit a so-called critical condition for boron diffusion through a 30 Å gate oxide. Boron dopant penetration is clearly observed for 60 Å gate oxides at an annealing condition of 1050 0C/10s. The flatband voltage shift can be as high as 0.56 volts as indicated by C-V measurements for boron penetrated gate oxides. However, 100 Å gate oxides are good diffusion barriers for boron at an annealing condition of 1100°C/10s. For BF2 implanted structures, the diffusion behavior is consistent with behavior reported in the literature.

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Degradation ◽  
Circuit Aging

Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

2022 ◽  
pp. 1-1
Author(s):  
Minghang Xie ◽  
Pengju Sun ◽  
Kaihong Wang ◽  
Quanming Luo ◽  
Xiong Du
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation ◽  
Degradation Monitoring ◽  
Gate Charge

Temperature accelerated gate oxide degradation under plasma-induced charging

1996 ◽  
Vol 17 (6) ◽  
pp. 288-290 ◽  
Author(s):  
T. Brozek ◽  
Y.D. Chan ◽  
C.R. Viswanathan
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation

Ultrathin gate oxide degradation under different rates of charge injection

1999 ◽  
Author(s):  
Pitsini Mongkolkachit ◽  
Bharat L. Bhuva ◽  
Sharad Prasad ◽  
N. Bui ◽  
Sherra E. Kerns
Keyword(s):  
Charge Injection ◽  
Gate Oxide ◽  
Oxide Degradation
Sign in / Sign up

Export Citation Format

Share Document