Improved Ultrathin Gate Oxide Integrity in p[sup +]-Polysilicon-Gate p-Channel Metal Oxide Semiconductor with Medium-Dose Fluorine Implantation

1999 ◽  
Vol 3 (6) ◽  
pp. 290 ◽  
Author(s):  
Chi-Chun Chen
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Polysilicon Gate ◽  
Medium Dose ◽  
Gate Oxide Integrity

Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based onP-/P-Thin-Film Epitaxial Silicon Wafers

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2565-2570 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Yuji Sugino ◽  
Norio Suzuki ◽  
Shogo Kiyota ◽  
Koichi Nagasawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon Wafers ◽  
Oxide Semiconductor ◽  
Epitaxial Silicon ◽  
Gate Oxide Integrity

Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N2O Nitrided Gate Oxide and N2O Polysilicon Gate Reoxidation

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5507-5509
Author(s):  
Chao Sung Lai ◽  
Tien Sheng Chao ◽  
Tan Fu Lei ◽  
Chung Len Lee ◽  
Tiao Yuan Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Polysilicon Gate

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects
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