Effects of NH/sub 3/-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects

2000 ◽  
Vol 47 (9) ◽  
pp. 1733-1739 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chan ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
S.M. Sze
Keyword(s):  
Copper Interconnects ◽  
Hydrogen Silsesquioxane ◽  
Plasma Nitridation ◽  
Electrical Characterizations ◽  
Low K

Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

2000 ◽  
Vol 147 (3) ◽  
pp. 1186 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
Jae-Kyun Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Copper Interconnects ◽  
Deuterium Plasma ◽  
Hydrogen Silsesquioxane ◽  
Low K

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Via Cleaning Technology for Post Etch Residues

2005 ◽  
Vol 103-104 ◽  
pp. 357-360
Author(s):  
B.G. Sharma ◽  
Chris Prindle
Keyword(s):  
Semiconductor Industry ◽  
Dielectric Materials ◽  
Copper Interconnects ◽  
Limiting Factor ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Widespread Acceptance ◽  
Cleaning Technology ◽  
Rc Delay ◽  
Low K

Interconnect RC delay is the limiting factor for device performance in submicron semiconductor technology. Copper and low-k dielectric materials can reduce this delay and have gained widespread acceptance in the semiconductor industry. The presence of copper interconnects provides unprecedented challenges for via cleaning technology and requires the development of novel process chemistries for improved device capability.

A Comparative Study of Ti/Low-k HSQ (Hydrogen Silsesquioxane) and Ti/TEOS (Tetraethylorthosilicate) Structures at Elevated Temperatures

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Comparative Study ◽  
Direct Contact ◽  
Elevated Temperatures ◽  
Primary Source ◽  
Hydrogen Silsesquioxane ◽  
Titanium Layer ◽  
To Come ◽  
Al Metallization ◽  
Interconnect Technology ◽  
Low K

AbstractFor the benefit of reducing capacitance in multilevel interconnect technology, low-k dielectric HSQ (hydrogen silsesquioxane) has been used as a gapfill material in Al-metallization- based non-etchback embedded scheme. The vias are consequently fabricated through the HSQ layer followed by W plug deposition. In order to reduce the extent of via poisoning and achieve good W/Al contact, thin Ti/TiN stack films are typically deposited before via plug deposition. In this case, HSQ makes direct contact with the Ti layer. The reliability of the Ti/HSQ structures at elevated temperatures has been systematically studied in this work by using a variety of techniques. These results are also compared with those from Ti/TEOS (Tetraethylorthosilicate) structure, where TEOS is a conventional intra-metal dielectric. When the temperature is below 550 °C, a significant number of oxygen atoms are observed to diffuse into the titanium layer. The primary source of oxygen is believed to come from the HSQ film. When the temperature is above 550 °C, HSQ starts to react with Ti. At 700 °C, a TiO/Ti5Si3/HSQ stack structure forms. The Ti/HSQ system exhibits a higher reactivity than that of the Ti/TEOS system.

Effectiveness of Ti, TiN, Ta, TaN, and W[sub 2]N as barriers for the integration of low-k dielectric hydrogen silsesquioxane

2000 ◽  
Vol 18 (1) ◽  
pp. 221 ◽  
Author(s):  
Yuxiao Zeng ◽  
Stephen W. Russell ◽  
Andrew J. McKerrow ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Hydrogen Silsesquioxane ◽  
Low K

Diffusion Barriers For Fluorinated Low-k Dielectrics

1999 ◽  
Vol 565 ◽  
Author(s):  
M. DelaRosa ◽  
A. Kumar ◽  
H. Bakhru ◽  
T.-M. Lu
Keyword(s):  
Barrier Layer ◽  
Process Integration ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Nuclear Reaction Analysis ◽  
Fluorine Concentration ◽  
Dielectric Barrier ◽  
Barrier Materials ◽  
Teflon Af ◽  
Low K

AbstractThe fluorinated low-k dielectrics SiO:F and Teflon AF were investigated for process integration with aluminum and copper interconnects. To minimize fluorine diffusion, several potential barrier materials were deposited onto the fluorinated dielectrics and characterized after heat treatment at temperatures up to 450°C. The barrier layers studied include conventional materials such as Ta, TaN, and TiN, in addition to several novel materials. Barrier layer materials were deposited using evaporation, and sputtering. The materials were characterized using nuclear reaction analysis (NRA) to determine the fluorine concentration profile. A reaction zone was noted at the dielectric-barrier interface on several samples, corresponding to the formation of a fluoride complex. In some instances, this fluoride layer was self-limiting and prevented further fluorine diffusion through the remainder of the barrier layer.

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