Effectiveness of Ti, TiN, Ta, TaN, and W[sub 2]N as barriers for the integration of low-k dielectric hydrogen silsesquioxane

2000 ◽  
Vol 18 (1) ◽  
pp. 221 ◽  
Author(s):  
Yuxiao Zeng ◽  
Stephen W. Russell ◽  
Andrew J. McKerrow ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Hydrogen Silsesquioxane ◽  
Low K

Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

2000 ◽  
Vol 147 (3) ◽  
pp. 1186 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
Jae-Kyun Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Copper Interconnects ◽  
Deuterium Plasma ◽  
Hydrogen Silsesquioxane ◽  
Low K

A Comparative Study of Ti/Low-k HSQ (Hydrogen Silsesquioxane) and Ti/TEOS (Tetraethylorthosilicate) Structures at Elevated Temperatures

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Comparative Study ◽  
Direct Contact ◽  
Elevated Temperatures ◽  
Primary Source ◽  
Hydrogen Silsesquioxane ◽  
Titanium Layer ◽  
To Come ◽  
Al Metallization ◽  
Interconnect Technology ◽  
Low K

AbstractFor the benefit of reducing capacitance in multilevel interconnect technology, low-k dielectric HSQ (hydrogen silsesquioxane) has been used as a gapfill material in Al-metallization- based non-etchback embedded scheme. The vias are consequently fabricated through the HSQ layer followed by W plug deposition. In order to reduce the extent of via poisoning and achieve good W/Al contact, thin Ti/TiN stack films are typically deposited before via plug deposition. In this case, HSQ makes direct contact with the Ti layer. The reliability of the Ti/HSQ structures at elevated temperatures has been systematically studied in this work by using a variety of techniques. These results are also compared with those from Ti/TEOS (Tetraethylorthosilicate) structure, where TEOS is a conventional intra-metal dielectric. When the temperature is below 550 °C, a significant number of oxygen atoms are observed to diffuse into the titanium layer. The primary source of oxygen is believed to come from the HSQ film. When the temperature is above 550 °C, HSQ starts to react with Ti. At 700 °C, a TiO/Ti5Si3/HSQ stack structure forms. The Ti/HSQ system exhibits a higher reactivity than that of the Ti/TEOS system.

The Integration of Low-k Dielectric Material Hydrogen Silsesquioxane (HSQ) with Nitride Thin Films as Barriers

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Barrier Layer ◽  
Refractory Metal ◽  
Dielectric Material ◽  
Considerable Importance ◽  
Hydrogen Silsesquioxane ◽  
Barrier Layers ◽  
Vlsi Technology ◽  
Materials Used ◽  
Low K

AbstractHSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of HSQ in multilevel interconnect schemes has been of considerable importance. In this study, the compatibility of HSQ with different nitride barrier layers, such as PVD and CVD TiN, PVD TaN, and CVD W2N, has been investigated by using a variety of techniques. The refractory metal barriers, Ti and Ta, are also included for a comparison. The degradation of HSQ films indicates a strong underlying barrier layer dependence. With CVD nitrides or refractory metals as barrier, HSQ exhibits a better structural and property stability than that with PVD nitrides. The possible mechanisms have been discussed to account for these observations.

Mesoporous low-k hydrogen-silsesquioxane films characterized by positron annihilation and other techniques

2003 ◽  
Vol 68 (3-4) ◽  
pp. 435-437 ◽  
Author(s):  
Kenji Ito ◽  
Yoshinori Kobayashi ◽  
Kouichi Hirata ◽  
Hisashi Togashi ◽  
Ryoichi Suzuki ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Hydrogen Silsesquioxane ◽  
Low K

Direct Patterning of Low-k Hydrogen Silsesquioxane Using X-Ray Exposure Technology

2003 ◽  
Vol 6 (5) ◽  
pp. G69 ◽  
Author(s):  
T. C. Chang ◽  
T. M. Tsai ◽  
P. T. Liu ◽  
Y. S. Mor ◽  
C. W. Chen ◽  
...  
Keyword(s):  
Hydrogen Silsesquioxane ◽  
X Ray ◽  
Direct Patterning ◽  
Low K

Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance

1999 ◽  
Vol 565 ◽  
Author(s):  
J. N. Bremmer ◽  
D. Gray ◽  
Y. Liu ◽  
K. Gruszynski ◽  
S. Marcus
Keyword(s):  
Dielectric Constant ◽  
Thermal Processing ◽  
Low Dielectric Constant ◽  
Process Conditions ◽  
Low Density ◽  
Hydrogen Silsesquioxane ◽  
Thermal Cure ◽  
Cure Process ◽  
Low Dielectric ◽  
Low K

AbstractLow dielectric constant hydrogen silsesquioxane films were achieved by rapid thermal cure processing with production viable equipment. A reduced dielectric constant of k = 2.5–2.6 is demonstrated by optimizing rapid thermal cure process conditions to produce low density hydrogen silsesquioxane thin films. This is a significant reduction relative to production proven furnace cure processed hydrogen silsesquioxane with k = 2.9. Concurrent with reduced k performance is a characteristic film expansion which contributes to formation of a low density structure. A mechanism for film expansion and relevance to low k performance is described; and issues relative to integration of rapid thermal processed low k hydrogen silsesquioxane are discussed.

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