Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

2000 ◽  
Vol 147 (3) ◽  
pp. 1186 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
Jae-Kyun Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Copper Interconnects ◽  
Deuterium Plasma ◽  
Hydrogen Silsesquioxane ◽  
Low K

Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments

2001 ◽  
Vol 693 ◽  
Author(s):  
J. Kim ◽  
B. Luo ◽  
R. Mehandru ◽  
F. Ren ◽  
K. P. Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Space Charge ◽  
Plasma Treatment ◽  
Space Charge Region ◽  
Forward Direction ◽  
Deuterium Plasma ◽  
Light Emitting ◽  
Plasma Treatments ◽  
Forward Current ◽  
Heterojunction Diodes

AbstractEffects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

Improvement of electrical properties of Cu/SiCOH low- k film integrated system by O 2 plasma treatment

2007 ◽  
Vol 16 (2) ◽  
pp. 524-528 ◽  
Author(s):  
Qian Xiao-Mei ◽  
Wei Yong-Xia ◽  
Yu Xiao-Zhu ◽  
Ye Chao ◽  
Ning Zhao-Yuan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Integrated System ◽  
Low K

Effectiveness of NH3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ)

2001 ◽  
Vol 40 (Part 2, No. 12A) ◽  
pp. L1311-L1313 ◽  
Author(s):  
Ting-Chang Chang ◽  
Yi-Shien Mor ◽  
Po-Tsun Liu ◽  
Tsung-Ming Tsai ◽  
Chi-Wen Chen ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Silsesquioxane ◽  
Low K

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Via Cleaning Technology for Post Etch Residues

2005 ◽  
Vol 103-104 ◽  
pp. 357-360
Author(s):  
B.G. Sharma ◽  
Chris Prindle
Keyword(s):  
Semiconductor Industry ◽  
Dielectric Materials ◽  
Copper Interconnects ◽  
Limiting Factor ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Widespread Acceptance ◽  
Cleaning Technology ◽  
Rc Delay ◽  
Low K

Interconnect RC delay is the limiting factor for device performance in submicron semiconductor technology. Copper and low-k dielectric materials can reduce this delay and have gained widespread acceptance in the semiconductor industry. The presence of copper interconnects provides unprecedented challenges for via cleaning technology and requires the development of novel process chemistries for improved device capability.

Influence of porosity on electrical properties of low-k dielectrics

2012 ◽  
Vol 92 ◽  
pp. 59-61 ◽  
Author(s):  
Els Van Besien ◽  
Marianna Pantouvaki ◽  
Larry Zhao ◽  
David De Roest ◽  
Mikhail R. Baklanov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low K
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