1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)
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Reliability methodology for prediction of micromachined accelerometer stiction

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761613 ◽

2003 ◽

Cited By ~ 15

Author(s):

A. Hartzell ◽

D. Woodilla

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Threshold voltage shift caused by copper contamination

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761632 ◽

2003 ◽

Author(s):

B. Vermeire ◽

C.A. Peterson ◽

H.G. Parks ◽

D. Sarid

Keyword(s):

Threshold Voltage ◽

Copper Contamination ◽

Threshold Voltage Shift ◽

Voltage Shift

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A study of Ta/sub 2/O/sub 5//rugged Si capacitor of 23 μC/μm/sup 2/ applied to high-density DRAMs using sub-0.2 μm process

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761585 ◽

2003 ◽

Author(s):

Y. Ohji ◽

S. Iijima ◽

A. Saito ◽

H. Miki ◽

M. Kanai ◽

...

Keyword(s):

High Density

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A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761647 ◽

2003 ◽

Cited By ~ 2

Author(s):

N.-K. Zous ◽

T. Wang ◽

C.-C. Yeh ◽

C.-W. Tsai ◽

C. Huang

Keyword(s):

Comparative Study ◽

Transient Characteristics ◽

Tunnel Oxides

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High-current characterization of dual-damascene copper interconnects in SiO/sub 2/- and low-k interlevel dielectrics for advanced CMOS semiconductor technologies

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761606 ◽

2003 ◽

Author(s):

S. Voldman ◽

R. Gauthier ◽

K. Morrisseau ◽

M. Hargrove ◽

V. McGahay ◽

...

Keyword(s):

Copper Interconnects ◽

High Current ◽

Dual Damascene ◽

Low K

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Study of oxide breakdown under very low electric field

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761594 ◽

2003 ◽

Cited By ~ 12

Author(s):

A. Teramoto ◽

H. Umeda ◽

K. Azamawari ◽

K. Kobayashi ◽

K. Shiga ◽

...

Keyword(s):

Electric Field ◽

Oxide Breakdown

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Performance and reliability of a new MEMS electrostatic lateral output motor

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761610 ◽

2003 ◽

Cited By ~ 13

Author(s):

S.T. Patton ◽

W.D. Cowan ◽

J.S. Zabinski

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Reliability of passivated 0.15 μm InAlAs-InGaAs HEMTs with pseudomorphic channel

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761599 ◽

2003 ◽

Author(s):

M. Dammann ◽

M. Chertouk ◽

W. Jantz ◽

K. Kohler ◽

K.H. Schmidt ◽

...

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Controlled silicon thinning for design debug of C4 packaged ICs

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761634 ◽

2003 ◽

Cited By ~ 4

Author(s):

R.R. Goruganthu ◽

M. Bruce ◽

J. Birdsley ◽

V. Bruce ◽

G. Gilfeather ◽

...

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Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761601 ◽

2003 ◽

Cited By ~ 2

Author(s):

R. Gaddi ◽

R. Menozzi ◽

D. Dieci ◽

C. Lanzieri ◽

G. Meneghesso ◽

...

Keyword(s):

Surface Effects ◽

Hydrogen Treatment

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1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Reliability methodology for prediction of micromachined accelerometer stiction

Threshold voltage shift caused by copper contamination

A study of Ta/sub 2/O/sub 5//rugged Si capacitor of 23 μC/μm/sup 2/ applied to high-density DRAMs using sub-0.2 μm process

A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides

High-current characterization of dual-damascene copper interconnects in SiO/sub 2/- and low-k interlevel dielectrics for advanced CMOS semiconductor technologies

Study of oxide breakdown under very low electric field

Performance and reliability of a new MEMS electrostatic lateral output motor

Reliability of passivated 0.15 μm InAlAs-InGaAs HEMTs with pseudomorphic channel

Controlled silicon thinning for design debug of C4 packaged ICs

Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)
Latest Publications