Correlation of preexisting diamagnetic defect centers with induced paramagnetic defect centers by ultraviolet or vacuum-ultraviolet photons in high-purity silica glasses

1993 ◽  
Vol 48 (21) ◽  
pp. 15584-15594 ◽  
Author(s):  
Hiroyuki Nishikawa ◽  
Ryuta Nakamura ◽  
Yoshimichi Ohki ◽  
Yoshimasa Hama
Keyword(s):  
High Purity ◽  
Vacuum Ultraviolet ◽  
Paramagnetic Defect ◽  
Silica Glasses ◽  
Defect Centers ◽  
Ultraviolet Photons

Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

1992 ◽  
Vol 45 (2) ◽  
pp. 586-591 ◽  
Author(s):  
Hiroyuki Nishikawa ◽  
Taiji Shiroyama ◽  
Ryuta Nakamura ◽  
Yoshimichi Ohki ◽  
Kaya Nagasawa ◽  
...  
Keyword(s):  
High Purity ◽  
Silica Glasses ◽  
Defect Centers

Delivering high-purity vacuum ultraviolet photons at the Brazilian toroidal grating monochromator (TGM) beamline

2007 ◽  
Vol 156-158 ◽  
pp. 168-171 ◽  
Author(s):  
R.L. Cavasso Filho ◽  
A.F. Lago ◽  
M.G.P. Homem ◽  
S. Pilling ◽  
A. Naves de Brito
Keyword(s):  
High Purity ◽  
Vacuum Ultraviolet ◽  
Grating Monochromator ◽  
Ultraviolet Photons

A synchrotron beamline for delivering high purity vacuum ultraviolet photons

2007 ◽  
Vol 78 (11) ◽  
pp. 115104 ◽  
Author(s):  
R. L. Cavasso Filho ◽  
M. G. P. Homen ◽  
P. T. Fonseca ◽  
A. Naves de Brito
Keyword(s):  
High Purity ◽  
Vacuum Ultraviolet ◽  
Ultraviolet Photons

Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

1988 ◽  
Vol 129 ◽  
Author(s):  
K. L. Tokuda ◽  
B. Pihlstrom ◽  
D. W. Kisker ◽  
M. Lamont Schnoes ◽  
G. J. Collins
Keyword(s):  
Growth Process ◽  
Vacuum Ultraviolet ◽  
Source Material ◽  
Organometallic Vapor Phase Epitaxy ◽  
Impurity Incorporation ◽  
High Quality ◽  
Selenium Compound ◽  
Ultraviolet Photons ◽  
Reduced Toxicity ◽  
Source Materials

ABSTRACTThe growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this work, we have used vacuum ultraviolet photons generated by a disk-plasma lamp to assist the ZnSe growth process using diethylselenium and diethylzinc as source materials. This approach has resulted in satisfactory growth rates and high material quality at temperatures as low as 250°C, without the limitations of prereaction typically observed when H2Se is used for the selenium source material. In addition, the alkyl selenium compound offers advantages due to reduced toxicity compared to H2Se. This new, low-growth-temperature process thus offers the possibility of improved stoichiometry and impurity incorporation control as well as a reduced thermal effect on the underlying substrate during growth. At the same time, the advantages of excellent morphology and uniformity typically exhibited by the alkylbased growth processes are retained.

scholarly journals Paramagnetic defect centers in BESOI and SIMOX buried oxides

1993 ◽  
Vol 40 (6) ◽  
pp. 1755-1764 ◽  
Author(s):  
W.L. Warren ◽  
M.R. Shaneyfelt ◽  
J.R. Schwank ◽  
D.M. Fleetwood ◽  
P.S. Winokur ◽  
...  
Keyword(s):  
Paramagnetic Defect ◽  
Defect Centers

Investigation of radiation defects in steatite ceramics SK-1 and SNC by the EPR method

2021 ◽  
Vol 23 (1) ◽  
pp. 42-46
Author(s):  
K.Kh. Saidakhmedov ◽  
I. Nuritdinov ◽  
M.I. Baydjanov
Keyword(s):  
Glass Phase ◽  
Epr Spectra ◽  
Structural Defects ◽  
Radiation Defects ◽  
Γ Irradiation ◽  
Paramagnetic Defect ◽  
Amorphous Phases ◽  
Epr Method ◽  
Defect Centers ◽  
High Doses

The EPR spectra of γ- and n-γ-reactor irradiated steatite ceramics SK-1 and SNC has been studied. It is shown that structural defects of the E ′-center type are created in the structure of the SK-1 and SNC ceramics under the action of high doses of γ-irradiation. After n-γ-irradiation and additional annealing, paramagnetic defect centers such as interstitial Me2++e− ions are created in the structure of the SNC ceramics, which are caused by amorphization of the ceramic crystal phase and the creation of a Mg enriched glass phase at the interface between crystalline and amorphous phases.

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons
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