A synchrotron beamline for delivering high purity vacuum ultraviolet photons

2007 ◽  
Vol 78 (11) ◽  
pp. 115104 ◽  
Author(s):  
R. L. Cavasso Filho ◽  
M. G. P. Homen ◽  
P. T. Fonseca ◽  
A. Naves de Brito
Keyword(s):  
High Purity ◽  
Vacuum Ultraviolet ◽  
Ultraviolet Photons

Delivering high-purity vacuum ultraviolet photons at the Brazilian toroidal grating monochromator (TGM) beamline

2007 ◽  
Vol 156-158 ◽  
pp. 168-171 ◽  
Author(s):  
R.L. Cavasso Filho ◽  
A.F. Lago ◽  
M.G.P. Homem ◽  
S. Pilling ◽  
A. Naves de Brito
Keyword(s):  
High Purity ◽  
Vacuum Ultraviolet ◽  
Grating Monochromator ◽  
Ultraviolet Photons

Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

1988 ◽  
Vol 129 ◽  
Author(s):  
K. L. Tokuda ◽  
B. Pihlstrom ◽  
D. W. Kisker ◽  
M. Lamont Schnoes ◽  
G. J. Collins
Keyword(s):  
Growth Process ◽  
Vacuum Ultraviolet ◽  
Source Material ◽  
Organometallic Vapor Phase Epitaxy ◽  
Impurity Incorporation ◽  
High Quality ◽  
Selenium Compound ◽  
Ultraviolet Photons ◽  
Reduced Toxicity ◽  
Source Materials

ABSTRACTThe growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this work, we have used vacuum ultraviolet photons generated by a disk-plasma lamp to assist the ZnSe growth process using diethylselenium and diethylzinc as source materials. This approach has resulted in satisfactory growth rates and high material quality at temperatures as low as 250°C, without the limitations of prereaction typically observed when H2Se is used for the selenium source material. In addition, the alkyl selenium compound offers advantages due to reduced toxicity compared to H2Se. This new, low-growth-temperature process thus offers the possibility of improved stoichiometry and impurity incorporation control as well as a reduced thermal effect on the underlying substrate during growth. At the same time, the advantages of excellent morphology and uniformity typically exhibited by the alkylbased growth processes are retained.

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons

Metallic Na formation in/on NaCl crystals with irradiation by electron or vacuum ultraviolet photons

1997 ◽  
Vol 49 (6) ◽  
pp. 609-615 ◽  
Author(s):  
Shigehiro Owaki ◽  
Shigeko Koyama ◽  
Masao Takahashi ◽  
Masao Kamada ◽  
Ryouichi Suzuki
Keyword(s):  
Vacuum Ultraviolet ◽  
Ultraviolet Photons

Scanning Tunneling Microscopic Study of the Growth Process in Photochemical Vapor Deposition of Aluminum Film

1990 ◽  
Vol 201 ◽  
Author(s):  
Mitsugu Hanabusa ◽  
Kouji Sahara
Keyword(s):  
Vacuum Ultraviolet ◽  
Early Stage ◽  
Aluminum Hydride ◽  
Wavelength Dependence ◽  
Aluminum Film ◽  
Scanning Tunneling ◽  
Horizontal Growth ◽  
Ultraviolet Photons ◽  
Photochemical Vapor Deposition ◽  
Deuterium Lamp

AbstractAluminum thin films were photodeposited on silicon wafer from dimethyl-aluminum hydride under illumination of the ultraviolet photons generated by a deuterium lamp with a distinguished wavelength dependence. Namely, the growth rates increase linearly with vapor pressure under illumination of the l60-nm vacuum ultraviolet band from the lamp, while the growth starts above 0.3 mTorr only with the 240-nm band. To study the early stage of photo-deposition of Al, we constructed a scanning tunneling microscope and observed Al, islands. Steep sides were observed on islands with the distinguished boundary between vertical and horizontal growth. The shape of islands formed in the illuminated region and in the dark area was identical, thus indicating the absence of photo-induced migration effects.

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