Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

1988 ◽  
Vol 129 ◽  
Author(s):  
K. L. Tokuda ◽  
B. Pihlstrom ◽  
D. W. Kisker ◽  
M. Lamont Schnoes ◽  
G. J. Collins
Keyword(s):  
Growth Process ◽  
Vacuum Ultraviolet ◽  
Source Material ◽  
Organometallic Vapor Phase Epitaxy ◽  
Impurity Incorporation ◽  
High Quality ◽  
Selenium Compound ◽  
Ultraviolet Photons ◽  
Reduced Toxicity ◽  
Source Materials

ABSTRACTThe growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this work, we have used vacuum ultraviolet photons generated by a disk-plasma lamp to assist the ZnSe growth process using diethylselenium and diethylzinc as source materials. This approach has resulted in satisfactory growth rates and high material quality at temperatures as low as 250°C, without the limitations of prereaction typically observed when H2Se is used for the selenium source material. In addition, the alkyl selenium compound offers advantages due to reduced toxicity compared to H2Se. This new, low-growth-temperature process thus offers the possibility of improved stoichiometry and impurity incorporation control as well as a reduced thermal effect on the underlying substrate during growth. At the same time, the advantages of excellent morphology and uniformity typically exhibited by the alkylbased growth processes are retained.

Documents and Source Material

2017 ◽  
Vol 47 (1) ◽  
pp. 1-7
Keyword(s):  
Human Rights ◽  
Source Material ◽  
Human Rights Abuses ◽  
Palestinian Territories ◽  
Source Materials ◽  
Israeli Occupation

This section comprises JPS summaries and links to international, Arab, Israeli, and U.S. documents and source materials from the quarter spanning 16 May-15 November 2017. Fifty years of Israeli occupation was the focus of reports by the UN Office for the Coordination of Humanitarian Affairs (OCHA) and Oxfam that documented the ongoing human rights abuses in the occupied Palestinian territories. Other notable documents include Israeli NGO Gisha and UNSCO reports on the ten-year Gaza siege, Al Jazeera's interactive timeline of the Nakba, and an exchange of letters between the ACLU and U.S. senators on anti-BDS legislation.

Oral Testimony as Historical Source Material for the Reconstruction of the Judicial History of Shipping in India (1600-1800)

2019 ◽  
Vol 7 (1) ◽  
Author(s):  
Mir Kamruzzman Chowdhary
Keyword(s):  
Nineteenth Century ◽  
Source Material ◽  
Maritime History ◽  
Historical Source ◽  
Alternative Source ◽  
Oral Testimony ◽  
History Of ◽  
Judicial History ◽  
Source Materials

This study was an attempt to understand how the available alternative source materials, such as oral testimonies can serve as valuable assets to unveiling certain aspects of maritime history in India. A number of themes in maritime history in India failed to get the attention of the generation of historians, because of the paucity of written documents. Unlike in Europe, the penning down of shipping activities was not a concern for the authorities at the port in India. The pamphlets and newsletters declared the scheduled departure of the ship in Europe but, in India, this was done verbally. Therefore, maritime history in India remained marginalised. Hence, in this article, I make an endeavour to perceive how the oral testimonies can help shed some new light on certain aspects of maritime history in India, such as life on the ship, maritime practices, and perceptions among the littoral people in coastal societies. This article also outlines an approach on how the broader question on the transformation of scattered maritime practices among coastal societies can be adapted and transferred into an organised institution of law by the nineteenth century, and how these can be pursued in future. I also suggest in this article that the role of Europeans, especially the British, in the process of transformation, can be investigated further through oral testimonies in corroboration with the colonial archival records.

Purification of organic compounds in high-quality crystal growth process

2000 ◽  
Vol 66 (2-3) ◽  
pp. 303-308 ◽  
Author(s):  
C Salati ◽  
G Mignoni ◽  
M Zha ◽  
L Zanotti ◽  
C Mucchino ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Organic Compounds ◽  
Growth Process ◽  
High Quality ◽  
Crystal Growth Process

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging

2002 ◽  
Vol 389-393 ◽  
pp. 91-94 ◽  
Author(s):  
Peter J. Wellmann ◽  
Z.G. Herro ◽  
Thomas L. Straubinger ◽  
Albrecht Winnacker
Keyword(s):  
Growth Process ◽  
Source Material ◽  
X Ray ◽  
X Ray Imaging

Surface textures and rounding of quartz sand grains on intertidal sandbars, Bay of Fundy, Nova Scotia

1979 ◽  
Vol 16 (11) ◽  
pp. 2071-2085 ◽  
Author(s):  
Gerard V. Middleton ◽  
Patricia M. Davis
Keyword(s):  
Electron Microscope ◽  
Coastal Erosion ◽  
Source Material ◽  
Bay Of Fundy ◽  
Microscope Examination ◽  
Surface Textures ◽  
Wide Range ◽  
Source Materials ◽  
Quartz Grains

Intertidal sands in the Minas Basin are mineralogically immature, and are generally medium grained and moderately well sorted. Quartz grains show a wide range of roundness: mean roundness is subangular, but rounded to well rounded grains are also present. The sands are derived mainly from coastal erosion of Pleistocene tills and outwash and Triassic sandstones.Scanning electron microscope examination of the surface textures of more than 40 samples of source materials and tidal sands reveals that although many of the textures are relict, tidal sands show high, smoothed surfaces with non-oriented V's, and low areas with 'patchy growths', neither of which are present on source sands. Rounding of grains is undoubtedly taking place in the tidal environments, but much of the roundness is inherited from Triassic source material, and new surface textures are developed most rapidly on grains already partly rounded.Average distances of grain transport in the layer of sand moving on the bar surface is of the order of 1 m per tidal cycle, and allowing for reworking of the entire mass of sand in the bars, this results in a long term transport rate of only about 10 m per year. For the distance of transport, sediment transport by tides is probably more efficient at rounding sand grains than transport by rivers, but less efficient than transport by waves or wind. Geologically long periods of reworking by tides would be necessary to produce texturally supermature sands.

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