Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Millisecond Microwave Annealing: Reaching the 32 Nm Node

2004 ◽  
Vol 810 ◽  
Author(s):  
Keith Thompson ◽  
John H. Booske ◽  
R.L. Ives ◽  
John Lohr ◽  
Yurii A. Gorelov ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermal Treatments ◽  
Next Generation ◽  
Shallow Junction ◽  
Microwave Annealing ◽  
Microwave Reactor ◽  
Junction Formation ◽  
Processing Techniques

ABSTRACTThe next generation of Si devices requires thermal treatments of 1200°C – 1300°C but can only withstand temperatures above 800°C for a few milliseconds. Current rapid thermal processing techniques cannot meet these requirements. We have designed, constructed, and tested a microwave reactor that heats Si to 1300°C in only a few milliseconds and cools the wafer at a rate that exceeds a million degrees per second. Applying millisecond microwave annealing to ultra-shallow junction formation in advanced Si devices shows that this technique meets or exceeds the thermal processing requirements for the next several generations of Si devices.

Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In

1992 ◽  
Vol 260 ◽  
Author(s):  
Eric R. White ◽  
S. Ashok ◽  
D. L. Allara
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Metal Contacts ◽  
Red Phosphorus ◽  
Vapor Source ◽  
Junction Formation ◽  
Dopant Atoms ◽  
Cv Measurements ◽  
P Type ◽  
Vapor Treatment

ABSTRACTn+-n and n+-p junctions were formed on n-type and p-type Si using a thin film of phosphorus obtained from a simple vapor source, and driving in the dopant atoms in a rapid thermal processing (RTP) system. The vapor treatment consisted of heating powdered red phosphorus in a nitrogen ambient and allowing the resulting phosphorus vapor to deposit on the Si samples. This was done in an inexpensive apparatus constructed from flasks and test tubes. Following the vapor treatment, an SiOxfilm was sputtered over the phosphorus coating in order to serve as a capping layer during subsequent RTP drive-in that forms the junction. The junction properties were characterized by spreading resistance and electrical (IV and CV) measurements after deposition of metal contacts layers.

Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing

2000 ◽  
Vol 610 ◽  
Author(s):  
Jian-Yue Jina ◽  
Irene Rusakova ◽  
Qinmian Li ◽  
Jiarui Liu ◽  
Wei-Kan Chu
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Activation Barrier ◽  
Promising Method ◽  
Activation Mechanism ◽  
Rich Region ◽  
Shallow Junction ◽  
Low Temperature Annealing ◽  
Junction Formation

AbstractLow temperature annealing combined with pre-damage (or preamorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 /sq. using 20 keV 4×1014 Ω/cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550 °C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancyrich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

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