Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

1992 ◽  
Vol 45 (2) ◽  
pp. 586-591 ◽  
Author(s):  
Hiroyuki Nishikawa ◽  
Taiji Shiroyama ◽  
Ryuta Nakamura ◽  
Yoshimichi Ohki ◽  
Kaya Nagasawa ◽  
...  
1983 ◽  
Vol 64 (1) ◽  
pp. 149-157 ◽  
Author(s):  
S.W. Sun ◽  
A.P. Constant ◽  
C.D. Adams ◽  
B.W. Wessels

2000 ◽  
Author(s):  
Victor G. Plotnichenko ◽  
V. O. Sokolov ◽  
Eugeni M. Dianov

1990 ◽  
Vol 67 (3) ◽  
pp. 1302-1306 ◽  
Author(s):  
Ryoichi Tohmon ◽  
Akihiro Ikeda ◽  
Yasushi Shimogaichi ◽  
Shuji Munekuni ◽  
Yoshimichi Ohki ◽  
...  

1985 ◽  
Vol 61 ◽  
Author(s):  
Robert N. Schwartz ◽  
Gregory L. Tangonan ◽  
G. Richard Blair ◽  
Walee Chamulitrat ◽  
Larry Kevan

ABSTRACTGamma- and UV-induced defect centers in germanium and fluorine doped silica have been studied by electron paramagnetic resonance (EPR) spectroscopy. The complex spectrum at g≃2 in γ-irradiated germanium doped glass corresponds to a superposition of resonances from several germanium E′-centers. In UV-irradiated samples, however, the EPR spectrum is dominated by only one type of germanium E′-centers. Significant spectral simplification of γ-irradiated germanium doped silica can be achieved by heating or broadband photoirradiation. Similar results are observed in multimode germanium doped core optical fibers. UV-induced optical loss spectra in the 0.5–1.5 μm wavelength range were also measured in these core fibers as well as the growth kinetics of the UL-induced absorption. Gamma-irradiation of fluorine doped silica generated two different types of silicon E′-centers, Ea1. At lower radiation dose one sees a mixture of Ea1 and Ea2, but at higher radiation dose Ea2 dominates. A spectrum dominated by the Ea2 variant is also observed in LW-irradiated samples and in photobleached low gamma dose samples.


1989 ◽  
Author(s):  
Ryoichi Tohmon ◽  
Yasushi Shimogaichi ◽  
Yoshimichi Ohki ◽  
Kaya Nagasawa ◽  
Yoshimasa Hama

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