Interface‐state parameter determination by deep‐level transient spectroscopy

1980 ◽  
Vol 36 (6) ◽  
pp. 462-464 ◽  
Author(s):  
T. J. Tredwell ◽  
C. R. Viswanathan
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
State Parameter ◽  
Interface State ◽  
Parameter Determination ◽  
Transient Spectroscopy

scholarly journals Improved interface state density function in metal‐semiconductor junctions by deep‐level transient spectroscopy

1991 ◽  
Vol 69 (9) ◽  
pp. 6521-6525 ◽  
Author(s):  
N. C. Halder ◽  
H. W. Kim ◽  
K. M. D’Souza ◽  
D. E. Barnes ◽  
S. E. Hartson ◽  
...  
Keyword(s):  
Density Function ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Transient Spectroscopy

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 477-480 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
T. Shimizu ◽  
T. Suzuki ◽  
Y. Nakabayashi ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Channel Mobility ◽  
Transient Spectroscopy ◽  
Density Of Interface States

Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO2/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (Dit) near the conduction band of SiO2/SiC interfaces fabricated using N2O oxidation was much higher than that of SiO2/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N2O oxidation.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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