The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra

1988 ◽  
Vol 35 (6) ◽  
pp. 1197-1202 ◽  
Author(s):  
C. Barnes ◽  
T. Zietlow ◽  
K. Nakamura
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
Radiation Induced ◽  
Transient Spectroscopy

scholarly journals Improved interface state density function in metal‐semiconductor junctions by deep‐level transient spectroscopy

1991 ◽  
Vol 69 (9) ◽  
pp. 6521-6525 ◽  
Author(s):  
N. C. Halder ◽  
H. W. Kim ◽  
K. M. D’Souza ◽  
D. E. Barnes ◽  
S. E. Hartson ◽  
...  
Keyword(s):  
Density Function ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Transient Spectroscopy

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 489-492 ◽  
Author(s):  
Atsuo Kawasuso ◽  
Michael Weidner ◽  
F. Redmann ◽  
Thomas Frank ◽  
Reinhard Krause-Rehberg ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy

2005 ◽  
Vol 892 ◽  
Author(s):  
Mo Ahoujja ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Peak Intensity ◽  
Spectral Peaks ◽  
Deep Donor ◽  
Radiation Induced ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractSi doped GaN grown by molecular beam epitaxy on sapphire substrates were characterized by capacitance transient spectroscopy. Conventional deep level transient spectroscopy (DLTS) measurements displayed six deep level defects, labeled A1, A, B, C1, C, and D, with activation energy ranging from 0.20 to 0.82 eV below the conduction band. Based on the logarithmic dependence of the DLTS spectral peaks on the filling pulse width, it is deduced that the defects A, B, C, and D are concentrated in the vicinity of line dislocations. Double-correlation DLTS (DDLTS) measurements, on the other hand, showed that only defects A (0.82 eV) and D (0.22 eV) exhibited deep donor-like characteristics. Following a 1.0 MeV electron irradiation of the GaN sample, one radiation-induced peak, E, with activation energy less than 0.20 eV was observed in the DLTS spectrum. However, after annealing at 350 °C, this DLTS peak intensity was found to diminish significantly.

Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies

2005 ◽  
Vol 108-109 ◽  
pp. 261-266 ◽  
Author(s):  
Lyudmila I. Khirunenko ◽  
Yu.V. Pomozov ◽  
N.A. Tripachko ◽  
Mikhail G. Sosnin ◽  
A.V. Duvanskii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Absorption Bands ◽  
Interstitial Carbon ◽  
Intermediate States ◽  
Lower Activation ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Interstitial Carbon Atom

The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm-1 as well as another set of the bands at 812, 967.4 and 1086 cm-1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

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