Влияние ионов неодима (III) на фотолюминесценцию сульфидов кадмия и цинка в полиакрилатной матрице

Nanoscale particles ZnS:Nd3+, CdS:Nd3+ and (Zn,Cd)S:Nd3+ were synthesized and doped in a polymerizing methyl methacrylate medium during the production of optically transparent polyacrylate composites of the composition PMMA/ZnS:Nd3+, PMMA/CdS:Nd3+ and PMMA/(Zn,Cd)S:Nd3+. The excitation of photoluminescence (FL) and FL of semiconductor structures in composites is associated with the transition of electrons from the valence band to the conduction band and to the levels of structural defects of semiconductor particles, followed by recombination at these levels. Based on changes in the excitation spectra of FL and FL composites, assumptions are made about the structure of particles, the distribution of Nd3+ ions in it and their effect on photoluminescence.

Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review

Beginning from the 1990s, an ever-lasting interest in the THz spectroscopy and THz instruments has produced wide progress in the development of high-speed THz detectors. The constantly growing requirements aimed at the increase of spectral resolution, sensitivity, and acquisition rate of THz detectors have attracted much attention in this field till nowadays. In the present review, we summarize the most recent advances in the THz photodetectors based on semiconductor structures with quantum confinement of an electron gas. Their main advantages over existing detectors are fast response time, increased spectral resolution, and multicolor operation thanks to the variability of their designs and band structure engineering. These all allow using them in various important applications as single photon detection, THz heterodyne detection, continuous monitoring of toxic gases, THz free space communications, and radio astronomy, as well.

Radiopulse generation in dispersive nonlinear transmission lines with GaAs S-diodes

The article discusses the regularities that increase the efficiency of generation of microwave oscillations in nonlinear dispersive lines with commutation diodes. GaAs semiconductor structures were used as switching diodes. The results of numerical simulations and experiments are presented, showing that the amplitude of microwave oscillations in the line increases with decreasing oscillation frequency.