Improvements in the determination of interface state density using deep level transient spectroscopy

1984 ◽  
Vol 56 (6) ◽  
pp. 1744-1751 ◽  
Author(s):  
Wendell D. Eades ◽  
Richard M. Swanson
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Transient Spectroscopy

scholarly journals Improved interface state density function in metal‐semiconductor junctions by deep‐level transient spectroscopy

1991 ◽  
Vol 69 (9) ◽  
pp. 6521-6525 ◽  
Author(s):  
N. C. Halder ◽  
H. W. Kim ◽  
K. M. D’Souza ◽  
D. E. Barnes ◽  
S. E. Hartson ◽  
...  
Keyword(s):  
Density Function ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Transient Spectroscopy

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 477-480 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
T. Shimizu ◽  
T. Suzuki ◽  
Y. Nakabayashi ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Channel Mobility ◽  
Transient Spectroscopy ◽  
Density Of Interface States

Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO2/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (Dit) near the conduction band of SiO2/SiC interfaces fabricated using N2O oxidation was much higher than that of SiO2/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N2O oxidation.

Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO2/4H-SiC Interfaces

2018 ◽  
Vol 924 ◽  
pp. 289-292
Author(s):  
Yuji Yamagishi ◽  
Yasuo Cho
Keyword(s):  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Trap States ◽  
Accurate Analysis ◽  
Microscopic Evaluation ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Full Waveforms ◽  
Dimensional Mapping

We demonstrate our new local deep level spectroscopy system improved for more accurate analysis of trap states at SiO2/4H-SiC interfaces. Full waveforms of the local capacitance transient with the amplitude of attofarads and the time scale of microseconds were obtained and quantitatively analyzed. The local energy distribution of interface state density in the energy range of EC − Eit = 0.31–0.38 eV was obtained. Two-dimensional mapping of the interface states showed inhomogeneous contrasts with the lateral spatial scale of several hundreds of nanometers, suggesting that the physical origin of the trap states at SiO2/SiC interfaces is likely to be microscopically clustered.

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