An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation

2012 ◽  
Vol 112 (8) ◽  
pp. 083707 ◽  
Author(s):  
Dong Wang ◽  
Shuta Kojima ◽  
Keita Sakamoto ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Transient Spectroscopy

Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-voltage and Deep Level Transient Spectroscopy Methods

2008 ◽  
Vol 1108 ◽  
Author(s):  
Junjiroh Kikawa ◽  
Yuki Horiuchi ◽  
Eiji Shibata ◽  
Masamitsu Kaneko ◽  
Hirotaka Otake ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Sweep Rate ◽  
Interface States ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Trap Levels

AbstractInterface states produced at the interface between an insulator and GaN semiconductor determine the performance of GaN metal-insulator-semiconductor (MIS) field effect transistors. Therefore, it is important to know details of interface states characteristics to improve device performances. For above purpose, we have fabricated GaN MIS capacitors, then carried out capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) measurements, and analyzed the obtained results in detail.Wafers used in this study were n-type GaN grown on sapphire substrates by metal organic chemical vapor deposition. A film of SiN was deposited as an insulating layer using electron-cyclotron-resonance plasma-assisted deposition at room temperature, then samples were annealed at 400, 600 or 800°C in N2 atmosphere for 10 min.CV measurements were performed for all the samples at various frequencies and bias sweep rates in the dark condition. CV curves of all the samples exhibited ledges in the curves. Here, ledge indicates a region of which capacitance is independent of applied bias. Although each sample was annealed at each different temperature, it was observed at the same surface potential for all the samples. This result indicates that the Fermi level of the GaN/SiN interface is pinned by a particular trap. In addition, the shape of the CV curve depended on both frequency and bias sweep rate, and it was not observed in the results obtained by a quasi-static capacitance voltage measurement. This can be explained that the shape of ledge is determined by the quasi-equilibrium between a filling rate of traps and a bias sweep rate or test frequency.In the positive bias region of the ledge, a hysteresis window of the CV curve had some dependence on frequency but little dependence on bias sweep rate. On the other hand, in the negative bias region of the ledge, it had little dependence on frequency but obvious dependence on bias sweep rate. These dependences indicate two different traps and related to the ledge formation. The trap energy level related to the sweep rate dependence is estimated to be 0.34 eV by the temperature dependence of the width of hysteresis window.Deep level transient spectroscopy measurements were carried out to characterize the trap levels observed in the CV curves. Trap levels with activation energies of 0.32 and 0.78 eV were observed [1]. The former is almost equal to 0.34 eV obtained from the temperature dependence of the width of hysteresis window. The latter is similar to the interface trap reported by Nakano et al., which is considered to be originated from the complexes of Si and surface defect [2].[1] E. Shibata et al., Ext. Abstracts 2008 IMFEDK, Osaka, pp.69-70. (2008).[2] Y. Nakano and T. Jimbo, Appl. Phys. Lett. 80, 4756 (2002).

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 477-480 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
T. Shimizu ◽  
T. Suzuki ◽  
Y. Nakabayashi ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Channel Mobility ◽  
Transient Spectroscopy ◽  
Density Of Interface States

Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO2/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (Dit) near the conduction band of SiO2/SiC interfaces fabricated using N2O oxidation was much higher than that of SiO2/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N2O oxidation.

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy
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