Deep‐level transient spectroscopy: Increased accuracy of interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations

1991 ◽  
Vol 70 (11) ◽  
pp. 6915-6926 ◽  
Author(s):  
Anders Ricksand ◽  
Olof Engström
Keyword(s):  
Silicon Dioxide ◽  
Computer Simulations ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Data ◽  
Transient Spectroscopy ◽  
Silicon Silicon ◽  
Silicon Silicon Dioxide Interface

scholarly journals Improved interface state density function in metal‐semiconductor junctions by deep‐level transient spectroscopy

1991 ◽  
Vol 69 (9) ◽  
pp. 6521-6525 ◽  
Author(s):  
N. C. Halder ◽  
H. W. Kim ◽  
K. M. D’Souza ◽  
D. E. Barnes ◽  
S. E. Hartson ◽  
...  
Keyword(s):  
Density Function ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Transient Spectroscopy

The Ion Implanted Arsenic Tail in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
C. Clark
Keyword(s):  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Anodic Oxidation ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Activation ◽  
Spreading Resistance ◽  
Transient Spectroscopy ◽  
And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS

2010 ◽  
Vol 1246 ◽  
Author(s):  
Alberto F Basile ◽  
Sarit Dhar ◽  
John Rozen ◽  
Xudong Chen ◽  
John Williams ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electron Emission ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Emission Rates ◽  
Mos Capacitors ◽  
Transient Spectroscopy

AbstractSilicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

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