Interface state buildup by high‐field stressing in various metal‐oxide‐semiconductor insulators using deep level transient spectroscopy

1995 ◽  
Vol 67 (4) ◽  
pp. 530-532 ◽  
Author(s):  
S. Belkouch ◽  
C. Jean ◽  
C. Aktik ◽  
E. L. Ameziane
Keyword(s):  
Metal Oxide ◽  
Deep Level Transient Spectroscopy ◽  
High Field ◽  
Deep Level ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Transient Spectroscopy

Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS

2010 ◽  
Vol 1246 ◽  
Author(s):  
Alberto F Basile ◽  
Sarit Dhar ◽  
John Rozen ◽  
Xudong Chen ◽  
John Williams ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electron Emission ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Emission Rates ◽  
Mos Capacitors ◽  
Transient Spectroscopy

AbstractSilicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1996 ◽  
Vol 80 (3) ◽  
pp. 1578-1582 ◽  
Author(s):  
H. Kobayashi ◽  
K. Namba ◽  
Y. Yamashita ◽  
Y. Nakato ◽  
T. Komeda ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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