Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

2014 ◽  
Vol 104 (14) ◽  
pp. 143505 ◽  
Author(s):  
M. Meneghini ◽  
D. Bisi ◽  
D. Marcon ◽  
S. Stoffels ◽  
M. Van Hove ◽  
...  
Nanoscale ◽  
2018 ◽  
Vol 10 (29) ◽  
pp. 14290-14297 ◽  
Author(s):  
Chuanping Li ◽  
Ping Wang ◽  
Haijuan Li ◽  
Minmin Wang ◽  
Jie Zhang ◽  
...  

The crucial role of interfacial engineering in plasmon-driven water splitting enhancement is revealed on α-Fe2O3–Au@SiO2 heterostructured photoanodes.


2021 ◽  
Author(s):  
Kisung Chae ◽  
Andrew C Kummel ◽  
Kyeongjae Cho

Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium-zirconium oxide stack models for both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the...


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