Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

P. Lagger; P. Steinschifter; M. Reiner; M. Stadtmüller; G. Denifl; A. Naumann; J. Müller; L. Wilde; J. Sundqvist; D. Pogany; C. Ostermaier

doi:10.1063/1.4891532

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

Applied Physics Letters ◽

10.1063/1.4891532 ◽

2014 ◽

Vol 105 (3) ◽

pp. 033512 ◽

Cited By ~ 52

Author(s):

P. Lagger ◽

P. Steinschifter ◽

M. Reiner ◽

M. Stadtmüller ◽

G. Denifl ◽

...

Keyword(s):

Gate Bias ◽

Metal Insulator ◽

Dielectric Barrier ◽

Metal Insulator Semiconductor ◽

Bias Stress ◽

Semiconductor Structures ◽

Charging Dynamics ◽

Gate Bias Stress

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Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures

Applied Physics Letters ◽

10.1063/1.2679941 ◽

2007 ◽

Vol 90 (7) ◽

pp. 072911 ◽

Cited By ~ 72

Author(s):

Tatsuro Maeda ◽

Masayasu Nishizawa ◽

Yukinori Morita ◽

Shinichi Takagi

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interfacial Layers ◽

Semiconductor Structures

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Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2

2015 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC) ◽

10.1109/ropec.2015.7395135 ◽

2015 ◽

Author(s):

S. I. Garduno ◽

M. Estrada ◽

I. Hernandez ◽

A. Cerdeira ◽

J. I. Mejia ◽

...

Keyword(s):

Pulsed Laser ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Bias Stress ◽

Semiconductor Structures ◽

Stress Study

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Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

Semiconductors ◽

10.1134/1.1836058 ◽

2004 ◽

Vol 38 (12) ◽

pp. 1390-1393

Author(s):

V. A. Terekhov ◽

A. N. Man’ko ◽

E. N. Bormontov ◽

V. N. Levchenko ◽

S. Yu. Trebunskikh ◽

...

Keyword(s):

Electromagnetic Radiation ◽

Ultrashort Pulses ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1806439 ◽

2004 ◽

Vol 22 (6) ◽

pp. 2379-2383 ◽

Cited By ~ 24

Author(s):

Choelhwyi Bae ◽

Cristiano Krug ◽

Gerald Lucovsky

Keyword(s):

Electron Trapping ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Cited By ~ 9

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical properties of metal-insulator-metal and metal-insulator-semiconductor structures containing Langmuir-Blodgett insulating multilayers

Thin Solid Films ◽

10.1016/0040-6090(89)90173-9 ◽

1989 ◽

Vol 179 (1-2) ◽

pp. 121-127 ◽

Cited By ~ 12

Author(s):

F Kaneko ◽

M Shibata ◽

Y Inaba ◽

S Kobayashi

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Semiconductor Structures ◽

Metal Insulator Metal

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The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

Technical Physics Letters ◽

10.1134/s1063785014100137 ◽

2014 ◽

Vol 40 (10) ◽

pp. 837-840 ◽

Cited By ~ 8

Author(s):

S. V. Tikhov ◽

O. N. Gorshkov ◽

I. N. Antonov ◽

A. P. Kasatkin ◽

M. N. Koryazhkina

Keyword(s):

Resistive Memory ◽

Forming Process ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures

Physics of the Solid State ◽

10.1134/s1063783411090174 ◽

2011 ◽

Vol 53 (9) ◽

pp. 1921-1926 ◽

Cited By ~ 1

Author(s):

G. L. Klimchitskaya ◽

A. B. Fedortsov ◽

Yu. V. Churkin ◽

V. A. Yurova

Keyword(s):

Casimir Force ◽

Metal Insulator ◽

Insulating Layer ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Force Pressure

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Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

10.1109/phm-nanjing52125.2021.9612888 ◽

2021 ◽

Author(s):

WenYang Chen ◽

Y.Q. Chen ◽

KuiWei Geng

Keyword(s):

High Temperature ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Gan Hemts ◽

Gate Bias Stress

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Field effect studies on p-type PbTe metal/insulator/semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(82)90012-8 ◽

1982 ◽

Vol 92 (3) ◽

pp. 295-301

Author(s):

A.L. Dawar ◽

O.P. Taneja ◽

S.K. Paradkar ◽

Partap Kumar ◽

P.C. Mathur

Keyword(s):

Field Effect ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

P Type

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