Role of stress in irradiation‐then‐anneal technique used for improving radiation hardness of metal‐insulator‐semiconductor devices

1992 ◽  
Vol 61 (6) ◽  
pp. 675-677 ◽  
Author(s):  
Kuei Shu ◽  
Chang Liao ◽  
Jenn‐Gwo Hwu
Keyword(s):  
Semiconductor Devices ◽  
Radiation Hardness ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

2014 ◽  
Vol 116 (1) ◽  
pp. 014504 ◽  
Author(s):  
R. V. Galatage ◽  
D. M. Zhernokletov ◽  
H. Dong ◽  
B. Brennan ◽  
C. L. Hinkle ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Frequency Dispersion ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States

scholarly journals DYNAMIC STORAGE TIME MEASUREMENTS OF N-TYPE Hg1-xCdxTe METAL-INSULATOR-SEMICONDUCTOR DEVICES

1994 ◽  
Vol 43 (11) ◽  
pp. 1883
Author(s):  
HUANG HE ◽  
TANG DING-YUAN ◽  
TONG FEI-MING ◽  
ZHENG GUO-ZHEN
Keyword(s):  
Storage Time ◽  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Dynamic Storage

Analysis of thin CdS layers on InP for improved metal–insulator–semiconductor devices

1996 ◽  
Vol 80 (5) ◽  
pp. 2873-2882 ◽  
Author(s):  
Helen M. Dauplaise ◽  
Kenneth Vaccaro ◽  
Andrew Davis ◽  
George O. Ramseyer ◽  
Joseph P. Lorenzo
Keyword(s):  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
Sign in / Sign up

Export Citation Format

Share Document