The Role of Ferroelectric Polarization in Resistive Memory Properties of Metal/Insulator/Semiconductor Tunnel Junctions: A Comparative Study

2020 ◽  
Vol 12 (29) ◽  
pp. 32935-32942
Author(s):  
Yihao Yang ◽  
Ming Wu ◽  
Xiaofei Li ◽  
Haihua Hu ◽  
Zhizheng Jiang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Tunnel Junctions ◽  
Ferroelectric Polarization ◽  
Resistive Memory ◽  
Metal Insulator ◽  
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The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

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Vol 40 (10) ◽  
pp. 837-840 ◽  
Author(s):  
S. V. Tikhov ◽  
O. N. Gorshkov ◽  
I. N. Antonov ◽  
A. P. Kasatkin ◽  
M. N. Koryazhkina
Keyword(s):  
Resistive Memory ◽  
Forming Process ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures

Transport properties of metal/insulator/semiconductor tunnel junctions

2004 ◽  
Vol 241 (7) ◽  
pp. 1506-1509 ◽  
Author(s):  
J. H. Lee ◽  
S. Y. Park ◽  
Kyung-In Jun ◽  
K.-H. Shin ◽  
Jinki Hong ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

2014 ◽  
Vol 104 (14) ◽  
pp. 143505 ◽  
Author(s):  
M. Meneghini ◽  
D. Bisi ◽  
D. Marcon ◽  
S. Stoffels ◽  
M. Van Hove ◽  
...  
Keyword(s):  
Hot Electrons ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Drain Bias
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