The role of ZrN capping layer deposited on ultra-thin high-k Zr-doped yttrium oxide for metal-gate metal–insulator–semiconductor applications

Pi-Chun Juan; Fan-Chen Mong; Jen-Hung Huang

doi:10.1063/1.4819965

The role of ZrN capping layer deposited on ultra-thin high-k Zr-doped yttrium oxide for metal-gate metal–insulator–semiconductor applications

Journal of Applied Physics ◽

10.1063/1.4819965 ◽

2013 ◽

Vol 114 (8) ◽

pp. 084110 ◽

Cited By ~ 5

Author(s):

Pi-Chun Juan ◽

Fan-Chen Mong ◽

Jen-Hung Huang

Keyword(s):

Yttrium Oxide ◽

Metal Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capping Layer ◽

High K

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Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering

Thin Solid Films ◽

10.1016/j.tsf.2016.05.027 ◽

2016 ◽

Vol 618 ◽

pp. 55-59 ◽

Cited By ~ 2

Author(s):

Jung-Ruey Tsai ◽

Pi-Chun Juan ◽

Po-Jen Chen

Keyword(s):

Magnetron Sputtering ◽

High Power ◽

Metal Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capping Layer

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Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal–gate metal–insulator–semiconductor structures

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.01ad02 ◽

2016 ◽

Vol 56 (1S) ◽

pp. 01AD02 ◽

Cited By ~ 1

Author(s):

Jung-Ruey Tsai ◽

Pi-Chun Juan ◽

Cheng-Li Lin ◽

Guo-Cheng Lin

Keyword(s):

Electrical Properties ◽

Magnetron Sputtering ◽

High Power ◽

Metal Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

High K

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The Role of High-K Dielectrics in Improving the Performance of Metal-Insulator-Semiconductor Solar Cells

Silicon ◽

10.1007/s12633-020-00660-6 ◽

2020 ◽

Author(s):

S. Ben Machiche ◽

L. Dehimi ◽

H. Bencherif ◽

F. Pezzimenti

Keyword(s):

Solar Cells ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K

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A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Chinese Physics Letters ◽

10.1088/0256-307x/29/5/057702 ◽

2012 ◽

Vol 29 (5) ◽

pp. 057702 ◽

Cited By ~ 1

Author(s):

Yue-Chan Kong ◽

Fang-Shi Xue ◽

Jian-Jun Zhou ◽

Liang Li ◽

Chen Chen ◽

...

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

High K ◽

High K Dielectric

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Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

Applied Physics Letters ◽

10.1063/1.4891532 ◽

2014 ◽

Vol 105 (3) ◽

pp. 033512 ◽

Cited By ~ 52

Author(s):

P. Lagger ◽

P. Steinschifter ◽

M. Reiner ◽

M. Stadtmüller ◽

G. Denifl ◽

...

Keyword(s):

Gate Bias ◽

Metal Insulator ◽

Dielectric Barrier ◽

Metal Insulator Semiconductor ◽

Bias Stress ◽

Semiconductor Structures ◽

Charging Dynamics ◽

Gate Bias Stress

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Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

2019 International Conference on IC Design and Technology (ICICDT) ◽

10.1109/icicdt.2019.8790844 ◽

2019 ◽

Cited By ~ 1

Author(s):

Yutao Cai ◽

Yang Wang ◽

Miao Cui ◽

Wen Liu ◽

Huiqing Wen ◽

...

Keyword(s):

Electrical Properties ◽

Semiconductor Devices ◽

Passivation Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K

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Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.05.119 ◽

2017 ◽

Vol 718 ◽

pp. 104-111 ◽

Cited By ~ 6

Author(s):

M. Chandra Sekhar ◽

Nallabala Nanda Kumar Reddy ◽

Harish Sharma Akkera ◽

B. Purusottam Reddy ◽

V. Rajendar ◽

...

Keyword(s):

Electronic Properties ◽

Oxide Layer ◽

Layer Thickness ◽

Annealing Temperature ◽

Semiconductor Structure ◽

Oxide Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Structural And Electronic Properties

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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

Chinese Physics B ◽

10.1088/1674-1056/25/8/087305 ◽

2016 ◽

Vol 25 (8) ◽

pp. 087305 ◽

Cited By ~ 1

Author(s):

Hao Xu ◽

Hong Yang ◽

Wei-Chun Luo ◽

Ye-Feng Xu ◽

Yan-Rong Wang ◽

...

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Metal Gate ◽

Capping Layer ◽

Time Dependent Dielectric Breakdown ◽

High K

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Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors

Applied Physics Letters ◽

10.1063/1.2803221 ◽

2007 ◽

Vol 91 (17) ◽

pp. 172909 ◽

Cited By ~ 41

Author(s):

F. El Kamel ◽

P. Gonon ◽

C. Vallée

Keyword(s):

Experimental Evidence ◽

Oxygen Vacancies ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal

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Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422495 ◽

2007 ◽

Author(s):

K. H. Chiang ◽

H. C. Wu ◽

P. S. Chen ◽

C. H. Kuan ◽

C. S. Tsai

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K

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