Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

In this paper, the influence of oxide (SiO2) layer thickness on the different figure of merits of a FinFET is analysed by varying the oxide layer thickness which is present between the gate and the Fin. Here, the overall thickness of the FinFET is taken to be 30nm, and the oxide (SiO2) layer thickness is changed from 0.8 nm to 3nm, and the analog, radio frequency parameters are determined for different structures. The performance parameters like drain current (ID), transconductance generation factor (TGF), transconductance (gm), output conductance (gds), parasitic capacitances like Cgs, Cgd, Cgg, cut-off frequency (fT), gain bandwidth product (GBW) and maximum frequency of oscillation (fmax) are calculated to learn the influence of variation in the FinFET oxide (SiO2) layer thickness. It is detected from the result and analysis that the drain current, output conductance, transconductance generation factor, transconductance and gain bandwidth product improve with decrement in oxide layer thickness. But as a tradeoff, the internal capacitances like Cgs, Cgd, Cgg, maximum frequency of oscillation and cut-off frequency degrade when there is a reduction in oxide (SiO2) layer thickness.

The possibility to control the thickness of the oxide layer on the titanium Grade 2 by mechanical activation and heat treatment

Purpose: The paper presents the results of microstructure, surface development and thickness of the oxide layer on the pure titanium Grade 2 after mechanical activation and heat treatment (550°C/5h). Design/methodology/approach: Studies show that it is possible to control the thickness of the oxide layer by using different materials to change the roughness of surface - mechanical activation before heat treatment. After mechanical activation and heat treatment, the results of the thickness of the oxide layer as well as a level of surface development were obtained, presented and discussed. Findings: The conducted research have proved that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Research limitations/implications: The conducted research have showed up that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless, mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Practical implications: are possible using similar method for passivation titanium alloys for medical application. Originality/value: The paper presents the possibility of using mechanical preactivation of surface before heat treatment passivation.

Influence of mechanical activation and heat treatment on surface development and oxide layer thickness of Ti6Al4V ELI alloy

Purpose: The paper presents the results of mechanical activation of the surface on oxide layer thickness after heat treatment of TU6Al14V ELI alloy. Design/methodology/approach: Specimens were made from 5 mm diameter rod cut into semicircular slices. The samples were mechanically activated throughout mechanical treatment of the surface: one sandblasted with glass beads during 5 minutes and other ground with sandpaper grit 40, 180, 220 and 800 during 7.5 and 15 minutes. Findings: Then microstructure of specimens etched with Kroll solution was observed using an optical microscope and roughness parameters of the surface were measured. Research limitations/implications: Afterwards heat treatment (550°C, 5 hours) was conducted, then roughness parameters and thickness of the oxide layer were measured by means of a scanning microscope. Practical implications: The conducted research showed up that mechanical activation of the surface which cause an increase of surface development results in greater thickness of the oxide layer which is formed during heat treatment. Nevertheless, mechanical activation that results in a decrease of surface development, such as polishing, results in a decrease of oxide layer thickness. Originality/value: The results of the research can be used to obtain the desired thickness of the oxide layer in the production of the elements that require increased wear and corrosion resistance.

Oxidation of nanocrystalline silicon at room temperature and various humidity

Oxidation of HF vapor-etched nanocrystalline silicon films, prepared by drop coating from nanocrystalline Si sol in acetonitrile, was studied. Oxidation of nc-Si at room temperature in air with 5% and 86% relative humidity was observed by means of IR spectroscopy for 2 days. The change in film mass after 15 hours of oxidation was determined using quartz crystal microbalance. In dry air, film mass and integral intensity of bands attributed to vibrations in Si3-x‒Si‒Hx and Si-O-Si groups changed linearly with time. In humid air, intensity of in Si3-x‒Si‒Hx band decays exponentially and intensity of Si-O-Si band increases as a square root of oxidation time. Film mass gain after 15 hours of oxidation corresponds to an average oxide layer thickness of 0.02 nm in dry air and 0.51 nm in wet air.

Stress Characterization of the Interface Between Thermal Oxide and the 4H-SiC Epitaxial Layer Using Near-Field Optical Raman Microscopy

Stresses induced in the silicon carbide (SiC) epitaxial layer near the interface between thermal silicon oxide and 4H-SiC epitaxial substrate were measured using a near-field optical Raman microscope equipped with a hollow pyramid probe (aperture size: approximately 250 nm). The E2 phonon was observed to undergo a 0.17 cm−1 redshift owing to reduction in oxide-layer thickness from 300 nm to 0 nm; this result was compared against that obtained using a standard Raman microprobe sans the pyramidal probe. The result indicates that the epitaxial layer near the SiO2–4H-SiC interface was maintained under a constant tensile stress of the order of 50 MPa. This agrees well with the result obtained using the finite element method (FEM). Based on results obtained using the said Raman microprobe and Fourier transform infrared (FT-IR) measurements, use of an inhomogeneity formation model at the SiO2–4H-SiC interface has been proposed in this study.