Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Oxygen Precipitation Related Stress-Modified Crack Propagation in High Growth Rate Czochralski Silicon Wafers

2011 ◽  
Vol 159 (2) ◽  
pp. H125-H129 ◽  
Author(s):  
P. K. Kulshreshtha ◽  
YoHan Yoon ◽  
K.M. Youssef ◽  
E.A. Good ◽  
G. Rozgonyi
Keyword(s):  
Growth Rate ◽  
Crack Propagation ◽  
High Growth ◽  
High Growth Rate ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Related Stress

Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals

2006 ◽  
Vol 376-377 ◽  
pp. 169-172 ◽  
Author(s):  
Ling Zhong ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Impurity Engineering of Czochralski Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 261-267 ◽  
Author(s):  
Jia He Chen ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Integrated Circuits ◽  
Mechanical Strength ◽  
Large Scale ◽  
Silicon Wafers ◽  
The Novel ◽  
High Concentration ◽  
Czochralski Silicon ◽  
Void Defects ◽  
Silicon Materials ◽  
Novel Concept

The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping with a certain impurities into CZ silicon materials intentionally, such as nitrogen (N), germanium (Ge) and even carbon (C, with high concentration), internal gettering ability of CZ silicon wafers could be improved. Meanwhile, void defects in CZ silicon wafer could be easily eliminated during annealing at higher temperatures. Furthermore, it was also found that the mechanical strength could be increased, so that breakage of wafers decreased. Thus, it is believed that by impurity engineering CZ silicon wafers can satisfy the requirment of ultra large scale integrated circuits.

Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers

1999 ◽  
Vol 69-70 ◽  
pp. 63-72 ◽  
Author(s):  
Koji Sueoka ◽  
M. Akatsuka ◽  
Mitsuharu Yonemura ◽  
S. Sadamitsu ◽  
Eiichi Asayama ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Precipitation Behaviour
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