Gap states caused by oxygen precipitation in Czochralski silicon crystals

1998 ◽  
Vol 84 (8) ◽  
pp. 4255-4258 ◽  
Author(s):  
M. Koizuka ◽  
H. Yamada-Kaneta
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Gap States

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5577-5584 ◽  
Author(s):  
Akito Hara ◽  
Masaaki Koizuka ◽  
Masaki Aoki ◽  
Tetsuo Fukuda ◽  
Hiroshi Yamada-Kaneta ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Donor Formation

Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals

1989 ◽  
Vol 163 ◽  
Author(s):  
A. Hara ◽  
T. Fukuda ◽  
I. Hirai ◽  
A. Ohsawa
Keyword(s):  
Cooling Rate ◽  
Slow Cooling ◽  
Quenching Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

AbstractWe studied oxygen precipitation in quenched Czochralski silicon crystals. The larger the cooling rate and the higher the quenching temperature, the more oxygen precipitated. The defects enhancing oxygen precipitation are eliminated by annealing above 900°C. The defects are formed and removed repeatedly by quenching and slow cooling. We think that the aggregation of vacancies is related to those defects.

Gap states produced by oxygen precipitation in Czochralski silicon

Vacuum ◽  
2003 ◽  
Vol 71 (1-2) ◽  
pp. 141-145 ◽  
Author(s):  
B. Pivac ◽  
S. Ilić ◽  
A. Borghesi ◽  
A. Sassella ◽  
M. Porrini
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Gap States
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