Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

2004 ◽  
Vol 84 (22) ◽  
pp. 4394-4396 ◽  
Author(s):  
X. J. Zhou ◽  
L. Tsetseris ◽  
S. N. Rashkeev ◽  
D. M. Fleetwood ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Negative Bias ◽  
Silicon Devices ◽  
Metal Oxide Silicon ◽  
Bias Temperature Instabilities

Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes

2002 ◽  
Vol 81 (13) ◽  
pp. 2397-2399 ◽  
Author(s):  
Ziyuan Liu ◽  
Shinji Fujieda ◽  
Koichi Terashima ◽  
Markus Wilde ◽  
Katsuyuki Fukutani
Keyword(s):  
Metal Oxide ◽  
Temperature Stress ◽  
Negative Bias ◽  
Metal Oxide Silicon ◽  
Bias Temperature Stress
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