Comparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation

1987 ◽  
Vol 51 (20) ◽  
pp. 1643-1644
Author(s):  
D. B. Mott ◽  
S. P. Buchner
Keyword(s):  
Metal Oxide ◽  
High Field ◽  
Positive Charge ◽  
Electron Injection ◽  
X Ray ◽  
Silicon Devices ◽  
Field Electron ◽  
Metal Oxide Silicon

Influence of high-field electron injection regimes on modification of dielectric films of MOS devices

2010 ◽  
Vol 1 (2) ◽  
pp. 105-109
Author(s):  
V. V. Andreev ◽  
G. G. Bondarenko ◽  
A. A. Stolyarov ◽  
D. S. Vasyutin ◽  
A. M. Mikhal’kov
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Dielectric Films ◽  
Mos Devices ◽  
Field Electron

scholarly journals Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment

2015 ◽  
Vol 128 (5) ◽  
pp. 887-890 ◽  
Author(s):  
V.V. Andreev ◽  
G.G. Bondarenko ◽  
V.M. Maslovsky ◽  
A.A. Stolyarov
Keyword(s):  
High Field ◽  
Plasma Jet ◽  
Electron Injection ◽  
Arc Plasma ◽  
Mos Devices ◽  
Field Electron
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