Investigation of Cu/TaN Metal Gate for Metal-Oxide-Silicon Devices

Bing-Yue Tsui; Chih-Feng Huang

doi:10.1149/1.1522723

Investigation of Cu/TaN Metal Gate for Metal-Oxide-Silicon Devices

Journal of The Electrochemical Society ◽

10.1149/1.1522723 ◽

2003 ◽

Vol 150 (1) ◽

pp. G22 ◽

Cited By ~ 7

Author(s):

Bing-Yue Tsui ◽

Chih-Feng Huang

Keyword(s):

Metal Oxide ◽

Metal Gate ◽

Silicon Devices ◽

Metal Oxide Silicon

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Investigation of Cu/TaN Metal Gate for Metal-Oxide-Silicon Devices [Journal of The Electrochemical Society, 150, G22 (2003)]

Journal of The Electrochemical Society ◽

10.1149/1.1566966 ◽

2003 ◽

Vol 150 (5) ◽

pp. L10

Author(s):

Bing-Yue Tsui ◽

Chih-Feng Huang

Keyword(s):

Metal Oxide ◽

Metal Gate ◽

Electrochemical Society ◽

Silicon Devices ◽

Metal Oxide Silicon

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Comparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation

Applied Physics Letters ◽

10.1063/1.98582 ◽

1987 ◽

Vol 51 (20) ◽

pp. 1643-1644

Author(s):

D. B. Mott ◽

S. P. Buchner

Keyword(s):

Metal Oxide ◽

High Field ◽

Positive Charge ◽

Electron Injection ◽

X Ray ◽

Silicon Devices ◽

Field Electron ◽

Metal Oxide Silicon

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Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/32/13/301 ◽

1999 ◽

Vol 32 (13) ◽

pp. 1435-1442 ◽

Cited By ~ 8

Author(s):

A El-Hdiy ◽

Dj Ziane ◽

F Nebel ◽

D Vuillaume ◽

M Jourdain

Keyword(s):

Metal Oxide ◽

Interface State ◽

Field Polarity ◽

Silicon Devices ◽

State Generation ◽

Metal Oxide Silicon

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E[sup ʹ] centers and leakage currents in the gate oxides of metal oxide silicon devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1306308 ◽

2000 ◽

Vol 18 (4) ◽

pp. 2169 ◽

Cited By ~ 10

Author(s):

P. M. Lenahan ◽

J. J. Mele

Keyword(s):

Metal Oxide ◽

Leakage Currents ◽

Gate Oxides ◽

Silicon Devices ◽

Metal Oxide Silicon

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Experimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism

Journal of Applied Physics ◽

10.1063/1.366389 ◽

1997 ◽

Vol 82 (10) ◽

pp. 5235-5240 ◽

Cited By ~ 8

Author(s):

Tomohisa Mizuno ◽

Ryuji Ohba

Keyword(s):

Experimental Study ◽

Electron Transport ◽

Metal Oxide ◽

Degradation Mechanism ◽

Velocity Overshoot ◽

Silicon Devices ◽

Metal Oxide Silicon

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Giant isotope effect in hot electron degradation of metal oxide silicon devices

IEEE Transactions on Electron Devices ◽

10.1109/16.658674 ◽

1998 ◽

Vol 45 (2) ◽

pp. 406-416 ◽

Cited By ~ 125

Author(s):

K. Hess ◽

I.C. Kizilyalli ◽

J.W. Lyding

Keyword(s):

Metal Oxide ◽

Isotope Effect ◽

Hot Electron ◽

Silicon Devices ◽

Metal Oxide Silicon

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Kink effect on subthreshold current conduction mechanism for n‐channel metal‐oxide‐silicon devices

Journal of Applied Physics ◽

10.1063/1.363729 ◽

1996 ◽

Vol 80 (10) ◽

pp. 5821-5827 ◽

Cited By ~ 7

Author(s):

S. S. Chen ◽

S. C. Lin ◽

J. B. Kuo

Keyword(s):

Metal Oxide ◽

Conduction Mechanism ◽

Subthreshold Current ◽

Silicon Devices ◽

Kink Effect ◽

Current Conduction ◽

Metal Oxide Silicon

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RADFET: A review of the use of metal-oxide-silicon devices as integrating dosimeters

International Journal of Radiation Applications and Instrumentation Part C Radiation Physics and Chemistry ◽

10.1016/1359-0197(86)90134-7 ◽

1986 ◽

Vol 28 (2) ◽

pp. 235-244 ◽

Cited By ~ 88

Author(s):

Andrew Holmes-Siedle ◽

Leonard Adams

Keyword(s):

Metal Oxide ◽

Silicon Devices ◽

Metal Oxide Silicon

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Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices

Applied Physics Letters ◽

10.1063/1.1427132 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4171-4173

Author(s):

Kuei-Shu Chang-Liao ◽

Ching-Sang Chuang

Keyword(s):

Metal Oxide ◽

Concentration Profile ◽

Arsenic Concentration ◽

Gate Oxide ◽

Electric Properties ◽

Silicon Devices ◽

Metal Oxide Silicon

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Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.1757636 ◽

2004 ◽

Vol 84 (22) ◽

pp. 4394-4396 ◽

Cited By ~ 40

Author(s):

X. J. Zhou ◽

L. Tsetseris ◽

S. N. Rashkeev ◽

D. M. Fleetwood ◽

R. D. Schrimpf ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Negative Bias ◽

Silicon Devices ◽

Metal Oxide Silicon ◽

Bias Temperature Instabilities

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