E[sup ʹ] centers and leakage currents in the gate oxides of metal oxide silicon devices

2000 ◽  
Vol 18 (4) ◽  
pp. 2169 ◽  
Author(s):  
P. M. Lenahan ◽  
J. J. Mele
Keyword(s):  
Metal Oxide ◽  
Leakage Currents ◽  
Gate Oxides ◽  
Silicon Devices ◽  
Metal Oxide Silicon

Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

2004 ◽  
Vol 84 (22) ◽  
pp. 4394-4396 ◽  
Author(s):  
X. J. Zhou ◽  
L. Tsetseris ◽  
S. N. Rashkeev ◽  
D. M. Fleetwood ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Negative Bias ◽  
Silicon Devices ◽  
Metal Oxide Silicon ◽  
Bias Temperature Instabilities

scholarly journals Effect of external gettering with porous silicon on the electrical properties of Metal–Oxide–Silicon devices

2009 ◽  
Vol 2 (3) ◽  
pp. 983-988 ◽  
Author(s):  
N. Khedher ◽  
A. Ben Jaballah ◽  
M. Bouaïcha ◽  
H. Ezzaouia ◽  
R. Bennnaceur
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Metal Oxide ◽  
Silicon Devices ◽  
Metal Oxide Silicon
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