Experimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism

1997 ◽  
Vol 82 (10) ◽  
pp. 5235-5240 ◽  
Author(s):  
Tomohisa Mizuno ◽  
Ryuji Ohba
Keyword(s):  
Experimental Study ◽  
Electron Transport ◽  
Metal Oxide ◽  
Degradation Mechanism ◽  
Velocity Overshoot ◽  
Silicon Devices ◽  
Metal Oxide Silicon

Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

2004 ◽  
Vol 84 (22) ◽  
pp. 4394-4396 ◽  
Author(s):  
X. J. Zhou ◽  
L. Tsetseris ◽  
S. N. Rashkeev ◽  
D. M. Fleetwood ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Negative Bias ◽  
Silicon Devices ◽  
Metal Oxide Silicon ◽  
Bias Temperature Instabilities
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