Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices

2001 ◽  
Vol 79 (25) ◽  
pp. 4171-4173
Author(s):  
Kuei-Shu Chang-Liao ◽  
Ching-Sang Chuang
Keyword(s):  
Metal Oxide ◽  
Concentration Profile ◽  
Arsenic Concentration ◽  
Gate Oxide ◽  
Electric Properties ◽  
Silicon Devices ◽  
Metal Oxide Silicon

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon

Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

2004 ◽  
Vol 84 (22) ◽  
pp. 4394-4396 ◽  
Author(s):  
X. J. Zhou ◽  
L. Tsetseris ◽  
S. N. Rashkeev ◽  
D. M. Fleetwood ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Negative Bias ◽  
Silicon Devices ◽  
Metal Oxide Silicon ◽  
Bias Temperature Instabilities
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