Measurement of silicon dioxide film thicknesses by X-ray photoelectron spectroscopy

2001 ◽  
Author(s):  
C. J. Powell
Keyword(s):  
Silicon Dioxide ◽  
Photoelectron Spectroscopy ◽  
Silicon Dioxide Film ◽  
X Ray ◽  
Dioxide Film

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

2002 ◽  
Vol 92 (12) ◽  
pp. 7153-7156 ◽  
Author(s):  
M. Yoshikawa ◽  
K. Matsuda ◽  
Y. Yamaguchi ◽  
T. Matsunobe ◽  
Y. Nagasawa ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Silicon Dioxide Film ◽  
Cathodoluminescence Spectroscopy ◽  
Dioxide Film

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film

2018 ◽  
Vol 655 ◽  
pp. 22-26 ◽  
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Silicon Dioxide ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon Dioxide Film ◽  
Beam Production ◽  
Dioxide Film

Characterization of Silicon Oxides Formed by Light-Induced Anodisation for Silicon Solar Cell Surface Passivation

2014 ◽  
Vol 1647 ◽  
Author(s):  
Jie Cui ◽  
Xi Wang ◽  
Robert Opila ◽  
Alison Lennon
Keyword(s):  
Steady State ◽  
Silicon Dioxide ◽  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Thermally Grown Oxide ◽  
Silicon Surfaces ◽  
Quasi Steady State ◽  
Silicon Dioxide Film ◽  
Uniform Drift ◽  
P Type

ABSTRACTIn this paper we report the properties of the anodic silicon dioxide film formed using light-induced anodisation (LIA) method and its potential to be used as surface passivation layer of p-type silicon surfaces of silicon solar cells. The high uniformity of the formed oxide is possibly due to the uniform drift of the positive charge carriers in the silicon to the surface being anodised. The oxide grows at higher rate than that in nitric acid, an oxide layer with thickness of 18 nm can be formed by anodising for 10 min with 15 V bias in 0.5 M sulphuric acid. After annealing in oxygen and then forming gas at 400 °C for 30 min, an average effective carrier lifetime of 120 μs was measured by quasi-steady state photoluminance on 180 μm p-type 3-5 Ohm cm Cz silicon wafers, with a value of 110 μs being measured for the same wafers passivated by a thermally-grown oxide of the same thickness. The properties of the anodic silicon dioxide layers formed by LIA have been characterized by ellipsometry, x-ray photoelectron spectroscopy, quasi-steady state photoluminance and Fourier transform infrared spectroscopy.

Measurements for the Moisture Permeations and Thermal Resistances of Cyclo Olefin Copolymer Substrates Deposited a Silicon Dioxide Film

2008 ◽  
Author(s):  
Rong-Yuan Jou
Keyword(s):  
Thermal Resistance ◽  
Silicon Dioxide ◽  
Diffusion Barrier ◽  
Moisture Diffusion ◽  
Permeation Rate ◽  
Test Method ◽  
Thermal Barrier ◽  
Silicon Dioxide Film ◽  
Plastic Substrates ◽  
Dioxide Film

Plastic substrates for organic light-emitting devices (OLED) are extremely sensitive to moisture and oxygen. A new amorphous engineering thermoplastic, nominated cyclic olefin copolymer (COC) has been used for this application, because of higher transparence, lower birefringence, lower dispersion and lower water absorption. However, COC plastic substrates can’t sustain plasma-based processing temperatures at 350°C. In this study, experiments of the moisture permeation rate testing and the thermal resistance experiments are conducted to explore the moisture diffusion barrier and thermal barrier characteristics of COC substrate deposited a SiO2 thin film on it. Silicon dioxide layer of thickness, 0.25μm, 0.5μm, and 1 μm, respectively, are fabricated by PECVD. For the permeation rate measurement, the Ca-test method is adopted. For the thermal resistance measurements, two methods of the thermocouple in vacuum environment and the IR thermography are adopted and measured results are compared. Different surface temperatures, 323.15K, 373.15K, 408.15K, and 473.15K, respectively, are applied upon the silicon dioxide film and temperature differences for varied thickness of silicon dioxide film are measured. Experimental results are presented to investigate the behaviors of moisture diffusion barrier and thermal barrier characteristics of the COC/SiO2 structure.

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