Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition

2000 ◽  
Vol 147 (4) ◽  
pp. 1481 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
J. N. Sasserath ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Silicon Dioxide Film ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Dioxide Film

The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150°C

2003 ◽  
Vol 769 ◽  
Author(s):  
Su-hyuk Kang ◽  
Min-Cheol Lee ◽  
Kook-Chul Moon ◽  
Min-koo Han
Keyword(s):  
Silicon Dioxide ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Plasma Chemical ◽  
Silicon Dioxide Film ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Dioxide Film

AbstractAn ultra-low temperature processed silicon dioxide film has been fabricated by inductively coupled plasma chemical vapor deposition at 150°C using He/N2O/SiH4 mixture. The deposited silicon dioxide film exhibits a high breakdown field larger than 6MV/cm in case of high ICP plasma condition while the flat band voltage of the oxide film significantly shifted in the negative direction with increasing ICP power. In order to obtain both high electrical breakdown filed and the low flat-band voltage, excimer laser irradiation with the energy density of 430mJ/cm2 is employed. The oxide film irradiated by excimer laser exhibited considerably shifted in the positive direction without scarifying the breakdown characteristics.

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

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